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Nanostructures and optical characteristics of ZnO thin-film-like samples grown onGaN.

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Title:	Nanostructures and optical characteristics of ZnO thin-film-like samples grown onGaN.
Authors:	Chun-Yung CC Chi, Shu-Cheng SC Chin, Yen-Cheng YL Lu, Lin LH Hong, Yu-Li YL Lin, Fang-Yi FJ Jen, C CCY Yang, Bao-Ping BZ Zhang, Yusaburo YS Segawa
Source:	Nanotechnology. Dec2005, Vol. 16 Issue 12, p3084-3091. 8p.
Subjects:	Thin films, Nanostructures, Low temperatures, Surfaces (Technology)
Abstract:	We compared the nano-structures of three samples of ZnO thin films grown on GaN withdifferent growth temperature conditions. Although disconnected spiral domain structures(of the order of 100 nm in width) were observed in the samples of high-temperature growth,their crystal qualities are generally better than the one grown at low temperature,either near the GaN interface or far away from the interface. In the sample ofhigh-temperature growth through the whole process, the domain structures extend fromthe interface with a smaller scale and almost vertical sharp boundaries. The samplegrown at the low temperature showed a generally continuous structure from theinterface. However, its crystal quality is quite poor. In the sample with initiallow-temperature growth and then high-temperature growth, the ZnO layer started with acontinuous structure, like the sample of low-temperature growth. However, it evolvedinto domain structures similar to the sample of high-temperature growth beyondabout 200 nm in thickness. The samples of high-temperature growth generally havehigher photon emission efficiencies. The sample grown at the high temperaturethrough the whole growth process has the highest emission quantum efficiency. [ABSTRACT FROM AUTHOR]
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Database:	Engineering Source

Description
Abstract:	We compared the nano-structures of three samples of ZnO thin films grown on GaN withdifferent growth temperature conditions. Although disconnected spiral domain structures(of the order of 100 nm in width) were observed in the samples of high-temperature growth,their crystal qualities are generally better than the one grown at low temperature,either near the GaN interface or far away from the interface. In the sample ofhigh-temperature growth through the whole process, the domain structures extend fromthe interface with a smaller scale and almost vertical sharp boundaries. The samplegrown at the low temperature showed a generally continuous structure from theinterface. However, its crystal quality is quite poor. In the sample with initiallow-temperature growth and then high-temperature growth, the ZnO layer started with acontinuous structure, like the sample of low-temperature growth. However, it evolvedinto domain structures similar to the sample of high-temperature growth beyondabout 200 nm in thickness. The samples of high-temperature growth generally havehigher photon emission efficiencies. The sample grown at the high temperaturethrough the whole growth process has the highest emission quantum efficiency. [ABSTRACT FROM AUTHOR]
ISSN:	09574484
DOI:	10.1088/0957-4484/16/12/060