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In situ reduction and nitrification method for the synthesis of Ga and GaN quantum dotsin the channels of mesoporous silicon materials.

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Title: In situ reduction and nitrification method for the synthesis of Ga and GaN quantum dotsin the channels of mesoporous silicon materials.
Authors: Liang LL Li, Jian-lin JS Shi
Source: Nanotechnology. Jan2006, Vol. 17 Issue 1, p344-348. 5p.
Subjects: Quantum electronics, Quantum dots, Silica, Nanoparticles
Abstract: A novel and facile method for the synthesis of Ga and GaN quantum dots in the channelsof mesoporous silicon materials, designated as an in situ and low-temperature nitrificationmethod, is described. In this method, the Si–H functional groups were directly introducedinto the channels of SBA-15 mesoporous materials resulting in highly dispersed Gananoparticles on the pore walls of the matrix, which can be nitrified easily under relativelylower temperature. [ABSTRACT FROM AUTHOR]
Copyright of Nanotechnology is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 20148664
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: In situ reduction and nitrification method for the synthesis of Ga and GaN quantum dotsin the channels of mesoporous silicon materials.
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  Data: <searchLink fieldCode="AR" term="%22Liang+LL+Li%22">Liang LL Li</searchLink><br /><searchLink fieldCode="AR" term="%22Jian-lin+JS+Shi%22">Jian-lin JS Shi</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Nanotechnology%22">Nanotechnology</searchLink>. Jan2006, Vol. 17 Issue 1, p344-348. 5p.
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  Data: A novel and facile method for the synthesis of Ga and GaN quantum dots in the channelsof mesoporous silicon materials, designated as an in situ and low-temperature nitrificationmethod, is described. In this method, the Si–H functional groups were directly introducedinto the channels of SBA-15 mesoporous materials resulting in highly dispersed Gananoparticles on the pore walls of the matrix, which can be nitrified easily under relativelylower temperature. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
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  Data: <i>Copyright of Nanotechnology is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1088/0957-4484/17/1/059
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      – Code: eng
        Text: English
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        PageCount: 5
        StartPage: 344
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        Type: general
      – SubjectFull: Quantum dots
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      – SubjectFull: Silica
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      – SubjectFull: Nanoparticles
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      – TitleFull: In situ reduction and nitrification method for the synthesis of Ga and GaN quantum dotsin the channels of mesoporous silicon materials.
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            NameFull: Liang LL Li
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            NameFull: Jian-lin JS Shi
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              Text: Jan2006
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