Optical, electrical, and diffusion properties of hafnium and zirconium in single-crystal silicon
Saved in:
| Title: | Optical, electrical, and diffusion properties of hafnium and zirconium in single-crystal silicon |
|---|---|
| Authors: | Sachdeva, R.1 ravinder@berkeley.edu, Istratov, A.A.1, Radetic, T.2, Xu, X.1,2, Deenapanray, P.N.K.3, Weber, E.R.1 |
| Source: | Physica B. Apr2006, Vol. 376-377, p420-423. 4p. |
| Subjects: | Diffusion, Photoluminescence, Hafnium, Zirconium |
| Abstract: | Abstract: A study of optical, electrical, and diffusion properties of Hf and Zr in silicon is presented. Photoluminescence spectra were observed in Hf-implanted silicon. Isotope substitution confirms that the observed signal is Hf related. Several deep-level defects were found for Hf in both the upper and lower half of silicon band gap, and their parameters were tabulated. Dominant defect in deep-level spectra was determined to be a donor. Diffusion study of Zr-implanted samples indicated that Zr tends to diffuse out to the surface. Outdiffusion and precipitation of Zr which was found to form platelets, as confirmed by transmission electron microscopy, does not allow the traditional diffusion models to be used; however, an estimate of Zr diffusivity was performed, yielding a value of 2.8×10−15 cm2/s at 1100°C. [Copyright &y& Elsevier] |
| Copyright of Physica B is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
|---|---|
| Header | DbId: egs DbLabel: Engineering Source An: 20269381 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
| IllustrationInfo | |
| Items | – Name: Title Label: Title Group: Ti Data: Optical, electrical, and diffusion properties of hafnium and zirconium in single-crystal silicon – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Sachdeva%2C+R%2E%22">Sachdeva, R.</searchLink><relatesTo>1</relatesTo><i> ravinder@berkeley.edu</i><br /><searchLink fieldCode="AR" term="%22Istratov%2C+A%2EA%2E%22">Istratov, A.A.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Radetic%2C+T%2E%22">Radetic, T.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Xu%2C+X%2E%22">Xu, X.</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AR" term="%22Deenapanray%2C+P%2EN%2EK%2E%22">Deenapanray, P.N.K.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Weber%2C+E%2ER%2E%22">Weber, E.R.</searchLink><relatesTo>1</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Physica+B%22">Physica B</searchLink>. Apr2006, Vol. 376-377, p420-423. 4p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Diffusion%22">Diffusion</searchLink><br /><searchLink fieldCode="DE" term="%22Photoluminescence%22">Photoluminescence</searchLink><br /><searchLink fieldCode="DE" term="%22Hafnium%22">Hafnium</searchLink><br /><searchLink fieldCode="DE" term="%22Zirconium%22">Zirconium</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Abstract: A study of optical, electrical, and diffusion properties of Hf and Zr in silicon is presented. Photoluminescence spectra were observed in Hf-implanted silicon. Isotope substitution confirms that the observed signal is Hf related. Several deep-level defects were found for Hf in both the upper and lower half of silicon band gap, and their parameters were tabulated. Dominant defect in deep-level spectra was determined to be a donor. Diffusion study of Zr-implanted samples indicated that Zr tends to diffuse out to the surface. Outdiffusion and precipitation of Zr which was found to form platelets, as confirmed by transmission electron microscopy, does not allow the traditional diffusion models to be used; however, an estimate of Zr diffusivity was performed, yielding a value of 2.8×10−15 cm2/s at 1100°C. [Copyright &y& Elsevier] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Physica B is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=20269381 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1016/j.physb.2005.12.108 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 4 StartPage: 420 Subjects: – SubjectFull: Diffusion Type: general – SubjectFull: Photoluminescence Type: general – SubjectFull: Hafnium Type: general – SubjectFull: Zirconium Type: general Titles: – TitleFull: Optical, electrical, and diffusion properties of hafnium and zirconium in single-crystal silicon Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Sachdeva, R. – PersonEntity: Name: NameFull: Istratov, A.A. – PersonEntity: Name: NameFull: Radetic, T. – PersonEntity: Name: NameFull: Xu, X. – PersonEntity: Name: NameFull: Deenapanray, P.N.K. – PersonEntity: Name: NameFull: Weber, E.R. IsPartOfRelationships: – BibEntity: Dates: – D: 15 M: 04 Text: Apr2006 Type: published Y: 2006 Identifiers: – Type: issn-print Value: 09214526 Numbering: – Type: volume Value: 376-377 Titles: – TitleFull: Physica B Type: main |
| ResultId | 1 |