Optical, electrical, and diffusion properties of hafnium and zirconium in single-crystal silicon

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Title: Optical, electrical, and diffusion properties of hafnium and zirconium in single-crystal silicon
Authors: Sachdeva, R.1 ravinder@berkeley.edu, Istratov, A.A.1, Radetic, T.2, Xu, X.1,2, Deenapanray, P.N.K.3, Weber, E.R.1
Source: Physica B. Apr2006, Vol. 376-377, p420-423. 4p.
Subjects: Diffusion, Photoluminescence, Hafnium, Zirconium
Abstract: Abstract: A study of optical, electrical, and diffusion properties of Hf and Zr in silicon is presented. Photoluminescence spectra were observed in Hf-implanted silicon. Isotope substitution confirms that the observed signal is Hf related. Several deep-level defects were found for Hf in both the upper and lower half of silicon band gap, and their parameters were tabulated. Dominant defect in deep-level spectra was determined to be a donor. Diffusion study of Zr-implanted samples indicated that Zr tends to diffuse out to the surface. Outdiffusion and precipitation of Zr which was found to form platelets, as confirmed by transmission electron microscopy, does not allow the traditional diffusion models to be used; however, an estimate of Zr diffusivity was performed, yielding a value of 2.8×10−15 cm2/s at 1100°C. [Copyright &y& Elsevier]
Copyright of Physica B is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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DbLabel: Engineering Source
An: 20269381
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  Data: Optical, electrical, and diffusion properties of hafnium and zirconium in single-crystal silicon
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  Data: <searchLink fieldCode="JN" term="%22Physica+B%22">Physica B</searchLink>. Apr2006, Vol. 376-377, p420-423. 4p.
– Name: Subject
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  Data: <searchLink fieldCode="DE" term="%22Diffusion%22">Diffusion</searchLink><br /><searchLink fieldCode="DE" term="%22Photoluminescence%22">Photoluminescence</searchLink><br /><searchLink fieldCode="DE" term="%22Hafnium%22">Hafnium</searchLink><br /><searchLink fieldCode="DE" term="%22Zirconium%22">Zirconium</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Abstract: A study of optical, electrical, and diffusion properties of Hf and Zr in silicon is presented. Photoluminescence spectra were observed in Hf-implanted silicon. Isotope substitution confirms that the observed signal is Hf related. Several deep-level defects were found for Hf in both the upper and lower half of silicon band gap, and their parameters were tabulated. Dominant defect in deep-level spectra was determined to be a donor. Diffusion study of Zr-implanted samples indicated that Zr tends to diffuse out to the surface. Outdiffusion and precipitation of Zr which was found to form platelets, as confirmed by transmission electron microscopy, does not allow the traditional diffusion models to be used; however, an estimate of Zr diffusivity was performed, yielding a value of 2.8×10−15 cm2/s at 1100°C. [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Physica B is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – Type: doi
        Value: 10.1016/j.physb.2005.12.108
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      – Code: eng
        Text: English
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        PageCount: 4
        StartPage: 420
    Subjects:
      – SubjectFull: Diffusion
        Type: general
      – SubjectFull: Photoluminescence
        Type: general
      – SubjectFull: Hafnium
        Type: general
      – SubjectFull: Zirconium
        Type: general
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      – TitleFull: Optical, electrical, and diffusion properties of hafnium and zirconium in single-crystal silicon
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              Text: Apr2006
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              Y: 2006
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              Value: 376-377
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