View in EDS

Synthesis of mono and bi-layer of Si nanocrystals embedded in a dielectric matrix by e-beam evaporation of SiO/SiO2 thin films

Saved in:
Bibliographic Details
Title: Synthesis of mono and bi-layer of Si nanocrystals embedded in a dielectric matrix by e-beam evaporation of SiO/SiO2 thin films
Authors: Perego, M.1 Michele.perego@mdm.infm.it, Fanciulli, M.1, Bonafos, C.2, Cherkashin, N.2
Source: Materials Science & Engineering: C. Jul2006, Vol. 26 Issue 5-7, p835-839. 5p.
Subjects: Nanocrystals, Photoelectron spectroscopy, Thin films, Electron microscopy
Abstract: Abstract: Si nanocrystals (ncs) were synthesized by e-beam evaporation of SiO/SiO2 multilayer structures and subsequent annealing at high temperatures. We focused our attention on the possibility to manipulate the ncs dimension by changing the SiO layer thickness. Time of flight secondary ion mass spectrometry and X-ray photoelectron spectroscopy analyses of the annealed samples indicated that the thermal treatment induces a phase separation in the SiO layer. The formation of Si nanocrystals was confirmed by high-resolution transmission electron microscopy, although in the thinnest layers (below 2 nm) the Si clusters are probably amorphous. Preliminary results indicate that a similar approach is suitable also for synthesizing Ge nanocrystals. [Copyright &y& Elsevier]
Copyright of Materials Science & Engineering: C is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
FullText Text:
  Availability: 0
Header DbId: egs
DbLabel: Engineering Source
An: 21049574
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Synthesis of mono and bi-layer of Si nanocrystals embedded in a dielectric matrix by e-beam evaporation of SiO/SiO<subscript>2</subscript> thin films
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Perego%2C+M%2E%22">Perego, M.</searchLink><relatesTo>1</relatesTo><i> Michele.perego@mdm.infm.it</i><br /><searchLink fieldCode="AR" term="%22Fanciulli%2C+M%2E%22">Fanciulli, M.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Bonafos%2C+C%2E%22">Bonafos, C.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Cherkashin%2C+N%2E%22">Cherkashin, N.</searchLink><relatesTo>2</relatesTo>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Materials+Science+%26+Engineering%3A+C%22">Materials Science & Engineering: C</searchLink>. Jul2006, Vol. 26 Issue 5-7, p835-839. 5p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Nanocrystals%22">Nanocrystals</searchLink><br /><searchLink fieldCode="DE" term="%22Photoelectron+spectroscopy%22">Photoelectron spectroscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Electron+microscopy%22">Electron microscopy</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Abstract: Si nanocrystals (ncs) were synthesized by e-beam evaporation of SiO/SiO2 multilayer structures and subsequent annealing at high temperatures. We focused our attention on the possibility to manipulate the ncs dimension by changing the SiO layer thickness. Time of flight secondary ion mass spectrometry and X-ray photoelectron spectroscopy analyses of the annealed samples indicated that the thermal treatment induces a phase separation in the SiO layer. The formation of Si nanocrystals was confirmed by high-resolution transmission electron microscopy, although in the thinnest layers (below 2 nm) the Si clusters are probably amorphous. Preliminary results indicate that a similar approach is suitable also for synthesizing Ge nanocrystals. [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Materials Science & Engineering: C is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=21049574
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1016/j.msec.2005.09.058
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 5
        StartPage: 835
    Subjects:
      – SubjectFull: Nanocrystals
        Type: general
      – SubjectFull: Photoelectron spectroscopy
        Type: general
      – SubjectFull: Thin films
        Type: general
      – SubjectFull: Electron microscopy
        Type: general
    Titles:
      – TitleFull: Synthesis of mono and bi-layer of Si nanocrystals embedded in a dielectric matrix by e-beam evaporation of SiO/SiO2 thin films
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Perego, M.
      – PersonEntity:
          Name:
            NameFull: Fanciulli, M.
      – PersonEntity:
          Name:
            NameFull: Bonafos, C.
      – PersonEntity:
          Name:
            NameFull: Cherkashin, N.
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 07
              Text: Jul2006
              Type: published
              Y: 2006
          Identifiers:
            – Type: issn-print
              Value: 09284931
          Numbering:
            – Type: volume
              Value: 26
            – Type: issue
              Value: 5-7
          Titles:
            – TitleFull: Materials Science & Engineering: C
              Type: main
ResultId 1