APA (7th ed.) Citation

Huang, M., & Lu, T. (2006). Optimization of the Active-Layer Structure for the Deep-UV A1GaN Light-Emitting Diodes. IEEE Journal of Quantum Electronics, 42(7/8), 820. https://doi.org/10.1109/JQE.2006.877217

Chicago Style (17th ed.) Citation

Huang, Man-Fang, and Tsung-Hung Lu. "Optimization of the Active-Layer Structure for the Deep-UV A1GaN Light-Emitting Diodes." IEEE Journal of Quantum Electronics 42, no. 7/8 (2006): 820. https://doi.org/10.1109/JQE.2006.877217.

MLA (9th ed.) Citation

Huang, Man-Fang, and Tsung-Hung Lu. "Optimization of the Active-Layer Structure for the Deep-UV A1GaN Light-Emitting Diodes." IEEE Journal of Quantum Electronics, vol. 42, no. 7/8, 2006, p. 820, https://doi.org/10.1109/JQE.2006.877217.