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Optimization of the Active-Layer Structure for the Deep-UV A1GaN Light-Emitting Diodes.

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Title: Optimization of the Active-Layer Structure for the Deep-UV A1GaN Light-Emitting Diodes.
Authors: Man-Fang Huang1 mfhuang@cc.ncue, Tsung-Hung Lu1
Source: IEEE Journal of Quantum Electronics. Jul/Aug2006, Vol. 42 Issue 7/8, p820-826. 7p. 2 Black and White Photographs, 2 Charts, 13 Graphs.
Subjects: Diodes, SIMSCRIPT (Computer program language), Light emitting diodes, Vacuum tubes, Computer simulation, Quantum wells
Abstract: The dependence of the active-layer structure on the performance of the deep-UV AlGaN light-emitting diodes (LEDs) was theoretically investigated with an APSYS simulation program. Several structure parameters such as well width, well number, barrier height, barrier width, and doping type were employed to study how these parameters change the band structures as well as the carrier distributions. The band offset and bowing parameter used in the theoretical analysis were extracted from the experimental results. Theoretical analysis shows that the nonuniform carrier distributions as well as the low hole concentrations, which caused by polarization-induced tilted band structures, play important roles in improving the performance of the AlGaN LEDs. Compensating this asymmetric band structure and increasing the hole density are the important keys to improve the AlGaN LED performance. Numerical simulation results suggest that the higher output power can be obtained when the active layer consists of only one quantum well with a width of 1–3 nm and two thicker n-doped barriers with a small Al composition. [ABSTRACT FROM AUTHOR]
Copyright of IEEE Journal of Quantum Electronics is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 21928162
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Optimization of the Active-Layer Structure for the Deep-UV A1GaN Light-Emitting Diodes.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Man-Fang+Huang%22">Man-Fang Huang</searchLink><relatesTo>1</relatesTo><i> mfhuang@cc.ncue</i><br /><searchLink fieldCode="AR" term="%22Tsung-Hung+Lu%22">Tsung-Hung Lu</searchLink><relatesTo>1</relatesTo>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22IEEE+Journal+of+Quantum+Electronics%22">IEEE Journal of Quantum Electronics</searchLink>. Jul/Aug2006, Vol. 42 Issue 7/8, p820-826. 7p. 2 Black and White Photographs, 2 Charts, 13 Graphs.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Diodes%22">Diodes</searchLink><br /><searchLink fieldCode="DE" term="%22SIMSCRIPT+%28Computer+program+language%29%22">SIMSCRIPT (Computer program language)</searchLink><br /><searchLink fieldCode="DE" term="%22Light+emitting+diodes%22">Light emitting diodes</searchLink><br /><searchLink fieldCode="DE" term="%22Vacuum+tubes%22">Vacuum tubes</searchLink><br /><searchLink fieldCode="DE" term="%22Computer+simulation%22">Computer simulation</searchLink><br /><searchLink fieldCode="DE" term="%22Quantum+wells%22">Quantum wells</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: The dependence of the active-layer structure on the performance of the deep-UV AlGaN light-emitting diodes (LEDs) was theoretically investigated with an APSYS simulation program. Several structure parameters such as well width, well number, barrier height, barrier width, and doping type were employed to study how these parameters change the band structures as well as the carrier distributions. The band offset and bowing parameter used in the theoretical analysis were extracted from the experimental results. Theoretical analysis shows that the nonuniform carrier distributions as well as the low hole concentrations, which caused by polarization-induced tilted band structures, play important roles in improving the performance of the AlGaN LEDs. Compensating this asymmetric band structure and increasing the hole density are the important keys to improve the AlGaN LED performance. Numerical simulation results suggest that the higher output power can be obtained when the active layer consists of only one quantum well with a width of 1–3 nm and two thicker n-doped barriers with a small Al composition. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of IEEE Journal of Quantum Electronics is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1109/JQE.2006.877217
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 7
        StartPage: 820
    Subjects:
      – SubjectFull: Diodes
        Type: general
      – SubjectFull: SIMSCRIPT (Computer program language)
        Type: general
      – SubjectFull: Light emitting diodes
        Type: general
      – SubjectFull: Vacuum tubes
        Type: general
      – SubjectFull: Computer simulation
        Type: general
      – SubjectFull: Quantum wells
        Type: general
    Titles:
      – TitleFull: Optimization of the Active-Layer Structure for the Deep-UV A1GaN Light-Emitting Diodes.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Man-Fang Huang
      – PersonEntity:
          Name:
            NameFull: Tsung-Hung Lu
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 07
              Text: Jul/Aug2006
              Type: published
              Y: 2006
          Identifiers:
            – Type: issn-print
              Value: 00189197
          Numbering:
            – Type: volume
              Value: 42
            – Type: issue
              Value: 7/8
          Titles:
            – TitleFull: IEEE Journal of Quantum Electronics
              Type: main
ResultId 1