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Characterization of Si nanocrystals into SiO2 matrix

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Title: Characterization of Si nanocrystals into SiO2 matrix
Authors: Gravalidis, C.1, Logothetidis, S. logot@auth.gr, Hatziaras, N.1, Laskarakis, A.1, Tsiaoussis, I.1, Frangis, N.1
Source: Applied Surface Science. Oct2006, Vol. 253 Issue 1, p385-388. 4p.
Subjects: Electron microscopy, Nanocrystals, Transmission electron microscopy, X-rays
Abstract: Abstract: Silicon nanocrystals (nc-Si) have gained great interest due to their excellent optical and electronic properties and their applications in optoelectronics. The aim of this work is the study of growth mechanism of nc-Si into a-SiO2 matrix from SiO/SiO2 multilayer annealing, using non-destructive and destructive techniques. The multilayer were grown by e-beam evaporation from SiO and SiO2 materials and annealing at temperatures up to 1100°C in N2 atmosphere. X-rays reflectivity (XRR) and high resolution transmission electron microscopy (HRTEM) were used for the structural characterization and spectroscopic ellipsometry in IR (FTIRSE) energy region for the study of the bonding structure. The ellipsometric results gave a clear evidence of the formation of an a-SiO2 matrix after the annealing process. The XRR data showed that the density is being increased in the range from 25 to 1100°C. Finally, the HRTEM characterization proved the formation of nc-Si. Using the above results, we describe the growth mechanism of nc-Si into SiO2 matrix under N2 atmosphere. [Copyright &y& Elsevier]
Copyright of Applied Surface Science is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 22999196
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PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Characterization of Si nanocrystals into SiO<subscript>2</subscript> matrix
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  Data: <searchLink fieldCode="JN" term="%22Applied+Surface+Science%22">Applied Surface Science</searchLink>. Oct2006, Vol. 253 Issue 1, p385-388. 4p.
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  Data: Abstract: Silicon nanocrystals (nc-Si) have gained great interest due to their excellent optical and electronic properties and their applications in optoelectronics. The aim of this work is the study of growth mechanism of nc-Si into a-SiO2 matrix from SiO/SiO2 multilayer annealing, using non-destructive and destructive techniques. The multilayer were grown by e-beam evaporation from SiO and SiO2 materials and annealing at temperatures up to 1100°C in N2 atmosphere. X-rays reflectivity (XRR) and high resolution transmission electron microscopy (HRTEM) were used for the structural characterization and spectroscopic ellipsometry in IR (FTIRSE) energy region for the study of the bonding structure. The ellipsometric results gave a clear evidence of the formation of an a-SiO2 matrix after the annealing process. The XRR data showed that the density is being increased in the range from 25 to 1100°C. Finally, the HRTEM characterization proved the formation of nc-Si. Using the above results, we describe the growth mechanism of nc-Si into SiO2 matrix under N2 atmosphere. [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
  Label:
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  Data: <i>Copyright of Applied Surface Science is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1016/j.apsusc.2006.06.019
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      – Code: eng
        Text: English
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        Type: general
      – SubjectFull: Nanocrystals
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      – SubjectFull: Transmission electron microscopy
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              Text: Oct2006
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