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Dependence of power trench metal-oxide-semiconductor field-effect transistor processes on wafer thickness.

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Title: Dependence of power trench metal-oxide-semiconductor field-effect transistor processes on wafer thickness.
Authors: Daggubati, M.1 manmohan.daggubati@fairchildsemi.com, Sim, G.1, Long, D.1, Paravi, H.1, Wang, Q.1
Source: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films. Jul2006, Vol. 24 Issue 4, p1289-1292. 4p. 1 Black and White Photograph, 1 Chart, 6 Graphs.
Subjects: Metal oxide semiconductor field-effect transistors, Photolithography, Photoresists, Semiconductor wafers, Transmission electron microscopy
Abstract: The dependence of trench metal-oxide-semiconductor field-effect transistor processes on wafer thickness has been studied. In the photolithography process, it was found that the photoresist thickness decreased with the decrease of wafer thicknesses. This is due to the fact that thinner wafer has less thermal mass and hence less dissipation time. Unless compensated for, this change in resist thickness adds to critical dimension and trench depth variations. After the rapid thermal processing, the thinner wafers exhibited a lower resistivity and higher silicide stress (i.e., 3.23E+10 dyn/cm2 for 508 μm wafers and 4.60E+09 dyn/cm2 for 675 μm wafers). Also, the stress is more uniform across the thinner wafers, possibly due to uniform Si-rich TixSiy (x
Copyright of Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 23073901
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PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Dependence of power trench metal-oxide-semiconductor field-effect transistor processes on wafer thickness.
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  Data: <searchLink fieldCode="AR" term="%22Daggubati%2C+M%2E%22">Daggubati, M.</searchLink><relatesTo>1</relatesTo><i> manmohan.daggubati@fairchildsemi.com</i><br /><searchLink fieldCode="AR" term="%22Sim%2C+G%2E%22">Sim, G.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Long%2C+D%2E%22">Long, D.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Paravi%2C+H%2E%22">Paravi, H.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Wang%2C+Q%2E%22">Wang, Q.</searchLink><relatesTo>1</relatesTo>
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  Data: <searchLink fieldCode="DE" term="%22Metal+oxide+semiconductor+field-effect+transistors%22">Metal oxide semiconductor field-effect transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Photolithography%22">Photolithography</searchLink><br /><searchLink fieldCode="DE" term="%22Photoresists%22">Photoresists</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+wafers%22">Semiconductor wafers</searchLink><br /><searchLink fieldCode="DE" term="%22Transmission+electron+microscopy%22">Transmission electron microscopy</searchLink>
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  Label: Abstract
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  Data: The dependence of trench metal-oxide-semiconductor field-effect transistor processes on wafer thickness has been studied. In the photolithography process, it was found that the photoresist thickness decreased with the decrease of wafer thicknesses. This is due to the fact that thinner wafer has less thermal mass and hence less dissipation time. Unless compensated for, this change in resist thickness adds to critical dimension and trench depth variations. After the rapid thermal processing, the thinner wafers exhibited a lower resistivity and higher silicide stress (i.e., 3.23E+10 dyn/cm2 for 508 μm wafers and 4.60E+09 dyn/cm2 for 675 μm wafers). Also, the stress is more uniform across the thinner wafers, possibly due to uniform Si-rich TixSiy (x<y) phase. Both Z-contrast transmission electron microscopy imaging and energy dispersive x-ray profiling on the silicide layers of the thicker wafers revealed a Ti-rich layer (possibly TiSi) on the top of TixSiy (x<y) layer and at the Si-silicide interface; whereas only scattered regions of Ti-enriched regions were observed in thinner wafers. Higher temperature in thinner wafers seems to assist in the removal of this Ti-rich layer. [ABSTRACT FROM AUTHOR]
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  Data: <i>Copyright of Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1116/1.2170093
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      – Code: eng
        Text: English
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        PageCount: 4
        StartPage: 1289
    Subjects:
      – SubjectFull: Metal oxide semiconductor field-effect transistors
        Type: general
      – SubjectFull: Photolithography
        Type: general
      – SubjectFull: Photoresists
        Type: general
      – SubjectFull: Semiconductor wafers
        Type: general
      – SubjectFull: Transmission electron microscopy
        Type: general
    Titles:
      – TitleFull: Dependence of power trench metal-oxide-semiconductor field-effect transistor processes on wafer thickness.
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            NameFull: Daggubati, M.
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            NameFull: Sim, G.
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            NameFull: Long, D.
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            NameFull: Paravi, H.
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            NameFull: Wang, Q.
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            – D: 01
              M: 07
              Text: Jul2006
              Type: published
              Y: 2006
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            – TitleFull: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films
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