Nanoscale device architecture to reduce leakage currents through quantum-mechanical simulation.
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| Title: | Nanoscale device architecture to reduce leakage currents through quantum-mechanical simulation. |
|---|---|
| Authors: | Sarab, A. A. P.1, Datta, Deepanjan1, Dasgupta, Sudeb2 sudebfec@iitr.ernet.in |
| Source: | Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures. May/Jun2006, Vol. 24 Issue 3, p1384-1397. 14p. 2 Diagrams, 16 Graphs. |
| Subjects: | Nanoscience, Metal oxide semiconductors, Logic circuits, Quantum tunneling, Electron transport |
| Abstract: | In this article, the effect of the gate tunneling current in ultrathin gate-oxide metal-oxide-semiconductor (MOS) devices of an effective gate length of 10 nm is studied using a device simulation. A dramatic increase of gate and reverse-biased junction band-to-band-tunneling leakages in scaled devices results in a drastic increase in the total leakage power in a logic circuit. Here, we have proposed a device called parallel connected hetero material double-gate (PCHEM-DG) metal-oxide-semiconductor field-effect transistor (MOSFET) to facilitate the reduction of the effective gate leakage current over the conventional DG MOSFETs. First we have modeled the quantum transport phenomena in the device in order to gauge the potential effectiveness in nanoscale devices. In the study of the device, we have taken the ballistic electron transport in order to explore the effects of subband engineering on the MOS based technology. Then we have presented a simple model to evaluate the gate tunneling current in the device and compared and contrasted this current with the leakage current in the conventional DG MOSFET. We have compared the gate leakage current and the threshold voltage of the proposed device with MINIMOS 6.0 to prove the validity of our simulation results. It can be concluded that the scaling of the gate width cannot suppress the gate leakage, even if the specification of the threshold voltage is relaxed in order to shrink the gate width. [ABSTRACT FROM AUTHOR] |
| Copyright of Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 23074051 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Nanoscale device architecture to reduce leakage currents through quantum-mechanical simulation. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Sarab%2C+A%2E+A%2E+P%2E%22">Sarab, A. A. P.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Datta%2C+Deepanjan%22">Datta, Deepanjan</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Dasgupta%2C+Sudeb%22">Dasgupta, Sudeb</searchLink><relatesTo>2</relatesTo><i> sudebfec@iitr.ernet.in</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Vacuum+Science+%26+Technology%3A+Part+B-Microelectronics+%26+Nanometer+Structures%22">Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures</searchLink>. May/Jun2006, Vol. 24 Issue 3, p1384-1397. 14p. 2 Diagrams, 16 Graphs. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Nanoscience%22">Nanoscience</searchLink><br /><searchLink fieldCode="DE" term="%22Metal+oxide+semiconductors%22">Metal oxide semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Logic+circuits%22">Logic circuits</searchLink><br /><searchLink fieldCode="DE" term="%22Quantum+tunneling%22">Quantum tunneling</searchLink><br /><searchLink fieldCode="DE" term="%22Electron+transport%22">Electron transport</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: In this article, the effect of the gate tunneling current in ultrathin gate-oxide metal-oxide-semiconductor (MOS) devices of an effective gate length of 10 nm is studied using a device simulation. A dramatic increase of gate and reverse-biased junction band-to-band-tunneling leakages in scaled devices results in a drastic increase in the total leakage power in a logic circuit. Here, we have proposed a device called parallel connected hetero material double-gate (PCHEM-DG) metal-oxide-semiconductor field-effect transistor (MOSFET) to facilitate the reduction of the effective gate leakage current over the conventional DG MOSFETs. First we have modeled the quantum transport phenomena in the device in order to gauge the potential effectiveness in nanoscale devices. In the study of the device, we have taken the ballistic electron transport in order to explore the effects of subband engineering on the MOS based technology. Then we have presented a simple model to evaluate the gate tunneling current in the device and compared and contrasted this current with the leakage current in the conventional DG MOSFET. We have compared the gate leakage current and the threshold voltage of the proposed device with MINIMOS 6.0 to prove the validity of our simulation results. It can be concluded that the scaling of the gate width cannot suppress the gate leakage, even if the specification of the threshold voltage is relaxed in order to shrink the gate width. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1116/1.2201040 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 14 StartPage: 1384 Subjects: – SubjectFull: Nanoscience Type: general – SubjectFull: Metal oxide semiconductors Type: general – SubjectFull: Logic circuits Type: general – SubjectFull: Quantum tunneling Type: general – SubjectFull: Electron transport Type: general Titles: – TitleFull: Nanoscale device architecture to reduce leakage currents through quantum-mechanical simulation. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Sarab, A. A. P. – PersonEntity: Name: NameFull: Datta, Deepanjan – PersonEntity: Name: NameFull: Dasgupta, Sudeb IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 05 Text: May/Jun2006 Type: published Y: 2006 Identifiers: – Type: issn-print Value: 10711023 Numbering: – Type: volume Value: 24 – Type: issue Value: 3 Titles: – TitleFull: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures Type: main |
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