Bismuth doping of hydrogenated amorphous germanium thin films
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| Title: | Bismuth doping of hydrogenated amorphous germanium thin films |
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| Authors: | Burmeister, F., Comedi, D., Chambouleyron, I. ivanch@ifi.unicamp.br |
| Source: | Thin Solid Films. Dec2006, Vol. 515 Issue 4, p2442-2446. 5p. |
| Subjects: | Thin films, Semiconductors, Semiconductor defects, Free electron theory of metals |
| Abstract: | Abstract: The optoelectronic properties of Bi-doped hydrogenated amorphous germanium (a-Ge:H), with relative impurity concentrations [N imp/N Ge] ranging between 8×10−6 and 5.5×10−3, are reported. The incorporation of Bi produces small changes in the dark conductivity of a-Ge:H. For a three orders of magnitude change in impurity concentration the room-temperature conductivity changes by just one order of magnitude. Within this doping range no, or small, changes were measured in the values of the pseudo-gap, the Urbach energy, and the hydrogen content. The Fermi level always remains far from the conduction band edge, shifting by only 0.1 eV for the sample with the largest doping concentration. The main conclusion is that Bi is a very inefficient active donor in a-Ge:H. The likely reasons for such behavior are discussed. [Copyright &y& Elsevier] |
| Copyright of Thin Solid Films is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 23164395 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Bismuth doping of hydrogenated amorphous germanium thin films – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Burmeister%2C+F%2E%22">Burmeister, F.</searchLink><br /><searchLink fieldCode="AR" term="%22Comedi%2C+D%2E%22">Comedi, D.</searchLink><br /><searchLink fieldCode="AR" term="%22Chambouleyron%2C+I%2E%22">Chambouleyron, I.</searchLink><i> ivanch@ifi.unicamp.br</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Thin+Solid+Films%22">Thin Solid Films</searchLink>. Dec2006, Vol. 515 Issue 4, p2442-2446. 5p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductors%22">Semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+defects%22">Semiconductor defects</searchLink><br /><searchLink fieldCode="DE" term="%22Free+electron+theory+of+metals%22">Free electron theory of metals</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Abstract: The optoelectronic properties of Bi-doped hydrogenated amorphous germanium (a-Ge:H), with relative impurity concentrations [N imp/N Ge] ranging between 8×10−6 and 5.5×10−3, are reported. The incorporation of Bi produces small changes in the dark conductivity of a-Ge:H. For a three orders of magnitude change in impurity concentration the room-temperature conductivity changes by just one order of magnitude. Within this doping range no, or small, changes were measured in the values of the pseudo-gap, the Urbach energy, and the hydrogen content. The Fermi level always remains far from the conduction band edge, shifting by only 0.1 eV for the sample with the largest doping concentration. The main conclusion is that Bi is a very inefficient active donor in a-Ge:H. The likely reasons for such behavior are discussed. [Copyright &y& Elsevier] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Thin Solid Films is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1016/j.tsf.2006.06.021 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 5 StartPage: 2442 Subjects: – SubjectFull: Thin films Type: general – SubjectFull: Semiconductors Type: general – SubjectFull: Semiconductor defects Type: general – SubjectFull: Free electron theory of metals Type: general Titles: – TitleFull: Bismuth doping of hydrogenated amorphous germanium thin films Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Burmeister, F. – PersonEntity: Name: NameFull: Comedi, D. – PersonEntity: Name: NameFull: Chambouleyron, I. IsPartOfRelationships: – BibEntity: Dates: – D: 05 M: 12 Text: Dec2006 Type: published Y: 2006 Identifiers: – Type: issn-print Value: 00406090 Numbering: – Type: volume Value: 515 – Type: issue Value: 4 Titles: – TitleFull: Thin Solid Films Type: main |
| ResultId | 1 |
