Investigation of deep defects using generation-recombination noise.
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| Title: | Investigation of deep defects using generation-recombination noise. |
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| Authors: | Gislason, Hafliđi P.1 haflidi@hi.is, Seghier, Djelloul1 seghier@hi.is |
| Source: | Optica Applicata. 2006, Vol. 36 Issue 2/3, p359-371. 13p. |
| Subjects: | Noise measurement, Semiconductor analysis, Gallium arsenide, Surface defects, Photoconductivity, Thin films, Schottky barrier diodes |
| Abstract: | Noise spectroscopy is an effective tool to characterize the quality of semiconductor bulk and surface and a figure of merit for device quality as a whole. In certain cases, low-frequency noise can be used for the evaluation of device reliability. Further, measurements of the noise characteristics of GaAs materials are a useful technique when it comes to studying deep defects exhibiting a thermally activated capture. In the paper we present the technique of noise spectroscopy and illustrate it with some applications. They include photocapacitive and noise measurements on a deep DX-like defect which gives rise to persistent photoconductivity in Mg-doped p-type GaN films. We also apply DLTS, photoconductivity and noise spectroscopy to characterize n-type bulk GaAs and an EL2-related metastable defect. The third example illustrates experimental results on the photoconductivity and noise of forward and reverse biased Al0.3Ga0.7N/GaN-based Schottky barriers. In the light of these results the nature and origin of the responsible centers are discussed. [ABSTRACT FROM AUTHOR] |
| Copyright of Optica Applicata is the property of Oficyna Wydawnicza Politechniki Wroclawskiej and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Links: – Type: pdflink Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 24199645 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Investigation of deep defects using generation-recombination noise. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Gislason%2C+Hafliđi+P%2E%22">Gislason, Hafliđi P.</searchLink><relatesTo>1</relatesTo><i> haflidi@hi.is</i><br /><searchLink fieldCode="AR" term="%22Seghier%2C+Djelloul%22">Seghier, Djelloul</searchLink><relatesTo>1</relatesTo><i> seghier@hi.is</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Optica+Applicata%22">Optica Applicata</searchLink>. 2006, Vol. 36 Issue 2/3, p359-371. 13p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Noise+measurement%22">Noise measurement</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+analysis%22">Semiconductor analysis</searchLink><br /><searchLink fieldCode="DE" term="%22Gallium+arsenide%22">Gallium arsenide</searchLink><br /><searchLink fieldCode="DE" term="%22Surface+defects%22">Surface defects</searchLink><br /><searchLink fieldCode="DE" term="%22Photoconductivity%22">Photoconductivity</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Schottky+barrier+diodes%22">Schottky barrier diodes</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Noise spectroscopy is an effective tool to characterize the quality of semiconductor bulk and surface and a figure of merit for device quality as a whole. In certain cases, low-frequency noise can be used for the evaluation of device reliability. Further, measurements of the noise characteristics of GaAs materials are a useful technique when it comes to studying deep defects exhibiting a thermally activated capture. In the paper we present the technique of noise spectroscopy and illustrate it with some applications. They include photocapacitive and noise measurements on a deep DX-like defect which gives rise to persistent photoconductivity in Mg-doped p-type GaN films. We also apply DLTS, photoconductivity and noise spectroscopy to characterize n-type bulk GaAs and an EL2-related metastable defect. The third example illustrates experimental results on the photoconductivity and noise of forward and reverse biased Al0.3Ga0.7N/GaN-based Schottky barriers. In the light of these results the nature and origin of the responsible centers are discussed. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Optica Applicata is the property of Oficyna Wydawnicza Politechniki Wroclawskiej and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 13 StartPage: 359 Subjects: – SubjectFull: Noise measurement Type: general – SubjectFull: Semiconductor analysis Type: general – SubjectFull: Gallium arsenide Type: general – SubjectFull: Surface defects Type: general – SubjectFull: Photoconductivity Type: general – SubjectFull: Thin films Type: general – SubjectFull: Schottky barrier diodes Type: general Titles: – TitleFull: Investigation of deep defects using generation-recombination noise. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Gislason, Hafliđi P. – PersonEntity: Name: NameFull: Seghier, Djelloul IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 06 Text: 2006 Type: published Y: 2006 Identifiers: – Type: issn-print Value: 00785466 Numbering: – Type: volume Value: 36 – Type: issue Value: 2/3 Titles: – TitleFull: Optica Applicata Type: main |
| ResultId | 1 |
