Long-term stability of Ru-based protection layers in extreme ultraviolet lithography: A surface science approach.
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| Title: | Long-term stability of Ru-based protection layers in extreme ultraviolet lithography: A surface science approach. |
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| Authors: | Over, H.1 herbert.over@phys.chemie.uni-giessen.de, He, Y. B.1, Farkas, A.1, Mellau, G.1, Korte, C.1, Knapp, M.1, Chandhok, M.2, Fang, M.2 |
| Source: | Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures. Jul2007, Vol. 25 Issue 4, p1123-1138. 16p. 13 Diagrams, 4 Charts, 3 Graphs. |
| Subjects: | Ruthenium, Lithography, Ultraviolet radiation, Surfaces (Technology), Microstructure |
| Abstract: | Extreme ultraviolet lithography (EUVL) is a leading candidate for next-generation lithography for the semiconductor industry. This technology uses EUV light with a wavelength of 13.5 nm (92.5 eV) to be able to produce features as small as 20 nm in size. The short wavelength of EUV means that reflective optics is needed for lithography in the form of Si–Mo multilayer stacks. However, surface contamination by water and hydrocarbons together with EUV light reduces unacceptably the mirror reflectivity with time. In this article, the authors review the material properties of two promising capping layer materials, Ru and RuO2, for protecting the EUVL mirrors against oxidation, carbon uptake, and the permeation of hydrogen and oxygen. Special emphasis is put on the surface properties of these potential cap layer systems. For both materials the microstructure, the morphology, and the stability under oxidizing and reducing environments are reviewed to promote the search for a successful candidate for a capping layer material of EUV optics. [ABSTRACT FROM AUTHOR] |
| Copyright of Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 26147848 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Long-term stability of Ru-based protection layers in extreme ultraviolet lithography: A surface science approach. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Over%2C+H%2E%22">Over, H.</searchLink><relatesTo>1</relatesTo><i> herbert.over@phys.chemie.uni-giessen.de</i><br /><searchLink fieldCode="AR" term="%22He%2C+Y%2E+B%2E%22">He, Y. B.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Farkas%2C+A%2E%22">Farkas, A.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Mellau%2C+G%2E%22">Mellau, G.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Korte%2C+C%2E%22">Korte, C.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Knapp%2C+M%2E%22">Knapp, M.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Chandhok%2C+M%2E%22">Chandhok, M.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Fang%2C+M%2E%22">Fang, M.</searchLink><relatesTo>2</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Vacuum+Science+%26+Technology%3A+Part+B-Microelectronics+%26+Nanometer+Structures%22">Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures</searchLink>. Jul2007, Vol. 25 Issue 4, p1123-1138. 16p. 13 Diagrams, 4 Charts, 3 Graphs. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Ruthenium%22">Ruthenium</searchLink><br /><searchLink fieldCode="DE" term="%22Lithography%22">Lithography</searchLink><br /><searchLink fieldCode="DE" term="%22Ultraviolet+radiation%22">Ultraviolet radiation</searchLink><br /><searchLink fieldCode="DE" term="%22Surfaces+%28Technology%29%22">Surfaces (Technology)</searchLink><br /><searchLink fieldCode="DE" term="%22Microstructure%22">Microstructure</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Extreme ultraviolet lithography (EUVL) is a leading candidate for next-generation lithography for the semiconductor industry. This technology uses EUV light with a wavelength of 13.5 nm (92.5 eV) to be able to produce features as small as 20 nm in size. The short wavelength of EUV means that reflective optics is needed for lithography in the form of Si–Mo multilayer stacks. However, surface contamination by water and hydrocarbons together with EUV light reduces unacceptably the mirror reflectivity with time. In this article, the authors review the material properties of two promising capping layer materials, Ru and RuO2, for protecting the EUVL mirrors against oxidation, carbon uptake, and the permeation of hydrogen and oxygen. Special emphasis is put on the surface properties of these potential cap layer systems. For both materials the microstructure, the morphology, and the stability under oxidizing and reducing environments are reviewed to promote the search for a successful candidate for a capping layer material of EUV optics. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1116/1.2743648 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 16 StartPage: 1123 Subjects: – SubjectFull: Ruthenium Type: general – SubjectFull: Lithography Type: general – SubjectFull: Ultraviolet radiation Type: general – SubjectFull: Surfaces (Technology) Type: general – SubjectFull: Microstructure Type: general Titles: – TitleFull: Long-term stability of Ru-based protection layers in extreme ultraviolet lithography: A surface science approach. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Over, H. – PersonEntity: Name: NameFull: He, Y. B. – PersonEntity: Name: NameFull: Farkas, A. – PersonEntity: Name: NameFull: Mellau, G. – PersonEntity: Name: NameFull: Korte, C. – PersonEntity: Name: NameFull: Knapp, M. – PersonEntity: Name: NameFull: Chandhok, M. – PersonEntity: Name: NameFull: Fang, M. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 07 Text: Jul2007 Type: published Y: 2007 Identifiers: – Type: issn-print Value: 10711023 Numbering: – Type: volume Value: 25 – Type: issue Value: 4 Titles: – TitleFull: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures Type: main |
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