APA (7th ed.) Citation

Kissinger, G., Dabrowski, J., Sattler, A., Seuring, C., Müller, T., Richter, H., & von Ammon, W. (2007). Analytical Modeling of the Interaction of Vacancies and Oxygen for Oxide Precipitation in RTA Treated Silicon Wafers. Journal of The Electrochemical Society, 154(6), H454. https://doi.org/10.1149/1.2717492

Chicago Style (17th ed.) Citation

Kissinger, G., J. Dabrowski, A. Sattler, C. Seuring, T. Müller, H. Richter, and W. von Ammon. "Analytical Modeling of the Interaction of Vacancies and Oxygen for Oxide Precipitation in RTA Treated Silicon Wafers." Journal of The Electrochemical Society 154, no. 6 (2007): H454. https://doi.org/10.1149/1.2717492.

MLA (9th ed.) Citation

Kissinger, G., et al. "Analytical Modeling of the Interaction of Vacancies and Oxygen for Oxide Precipitation in RTA Treated Silicon Wafers." Journal of The Electrochemical Society, vol. 154, no. 6, 2007, p. H454, https://doi.org/10.1149/1.2717492.