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Optimization of electroluminescent diodes based on pm-SiC:H deposited at low temperature

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Title: Optimization of electroluminescent diodes based on pm-SiC:H deposited at low temperature
Authors: Stenger, I.1 ingrid.stenger@polytechnique.edu, Nguyen-Tran, Th.1, Abramov, A.1, Barthou, C.2, Roca i Cabarrocas, P.1
Source: Materials Science & Engineering: B. Feb2008, Vol. 147 Issue 2/3, p245-248. 4p.
Subjects: Electroluminescent devices, Diodes, Electroluminescence, Nanocrystals
Abstract: Abstract: Polymorphous silicon carbon (pm-SiC:H) thin films have been prepared from the decomposition of SiH4–CH4–H2 mixtures at low temperature (200°C) by plasma-enhanced chemical vapour deposition (PECVD). The optical and microstructural properties of the films were studied by spectroscopic ellipsometry and Raman spectroscopy. The SiH4/CH4 flow rate ratio is demonstrated as a key deposition parameter for optimizing the electroluminescence of PIN diodes incorporating this material for the intrinsic (I) layer. Diodes with rectification ratios above 106 were realized by using the optimized materials. Electroluminescence spectra, centred at 1.4eV, were obtained by applying a DC voltage lower than 4V, which make these devices interesting for optoelectronic applications. [Copyright &y& Elsevier]
Copyright of Materials Science & Engineering: B is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 29403994
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Optimization of electroluminescent diodes based on pm-SiC:H deposited at low temperature
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  Data: <searchLink fieldCode="AR" term="%22Stenger%2C+I%2E%22">Stenger, I.</searchLink><relatesTo>1</relatesTo><i> ingrid.stenger@polytechnique.edu</i><br /><searchLink fieldCode="AR" term="%22Nguyen-Tran%2C+Th%2E%22">Nguyen-Tran, Th.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Abramov%2C+A%2E%22">Abramov, A.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Barthou%2C+C%2E%22">Barthou, C.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Roca+i+Cabarrocas%2C+P%2E%22">Roca i Cabarrocas, P.</searchLink><relatesTo>1</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Materials+Science+%26+Engineering%3A+B%22">Materials Science & Engineering: B</searchLink>. Feb2008, Vol. 147 Issue 2/3, p245-248. 4p.
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  Data: <searchLink fieldCode="DE" term="%22Electroluminescent+devices%22">Electroluminescent devices</searchLink><br /><searchLink fieldCode="DE" term="%22Diodes%22">Diodes</searchLink><br /><searchLink fieldCode="DE" term="%22Electroluminescence%22">Electroluminescence</searchLink><br /><searchLink fieldCode="DE" term="%22Nanocrystals%22">Nanocrystals</searchLink>
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  Label: Abstract
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  Data: Abstract: Polymorphous silicon carbon (pm-SiC:H) thin films have been prepared from the decomposition of SiH4–CH4–H2 mixtures at low temperature (200°C) by plasma-enhanced chemical vapour deposition (PECVD). The optical and microstructural properties of the films were studied by spectroscopic ellipsometry and Raman spectroscopy. The SiH4/CH4 flow rate ratio is demonstrated as a key deposition parameter for optimizing the electroluminescence of PIN diodes incorporating this material for the intrinsic (I) layer. Diodes with rectification ratios above 106 were realized by using the optimized materials. Electroluminescence spectra, centred at 1.4eV, were obtained by applying a DC voltage lower than 4V, which make these devices interesting for optoelectronic applications. [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Materials Science & Engineering: B is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1016/j.mseb.2007.08.003
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      – Code: eng
        Text: English
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        PageCount: 4
        StartPage: 245
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      – SubjectFull: Electroluminescent devices
        Type: general
      – SubjectFull: Diodes
        Type: general
      – SubjectFull: Electroluminescence
        Type: general
      – SubjectFull: Nanocrystals
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      – TitleFull: Optimization of electroluminescent diodes based on pm-SiC:H deposited at low temperature
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              M: 02
              Text: Feb2008
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              Y: 2008
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