Extraction of Transport Dynamics in AlGaN/GaN HFETs Through Free Carrier Absorption.
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| Title: | Extraction of Transport Dynamics in AlGaN/GaN HFETs Through Free Carrier Absorption. |
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| Authors: | Yuh-Renn Wu1 yrwu@cc.ee.ntu.edu.tw, Hinckley, John M.2, Singh, Jasprit2 |
| Source: | Journal of Electronic Materials. May2008, Vol. 37 Issue 5, p578-584. 7p. 1 Diagram, 3 Charts, 5 Graphs. |
| Subjects: | Heterostructures, Field-effect transistors, Monte Carlo method, Equations, Dynamics, Spectrum analysis |
| Abstract: | The importance of AlGaN/GaN heterostructure field-effect transistor (HFETs) in high-power high-frequency applications is now well established. However, detailed information on high-field mobilities, velocity-field relations, carrier temperature, and momentum and energy relaxation times are not available. In this paper we carry out theoretical simulations based on Monte Carlo techniques to show that transport dynamics can be effectively extracted through free carrier absorption. Using short pulses of infrared radiation, it is possible to obtain the velocity-field curve by fitting the absorption spectrum without heating the device. We show this by solving the classical transport equation and then verify the results through Monte Carlo simulations. With the model presented it would be possible to extract carrier dynamics from experimentally measured results. Our work suggests that free carrier absorption experiments on AlGaN/GaN HFETs would provide important transport information, which would be very useful in device design and modeling. [ABSTRACT FROM AUTHOR] |
| Copyright of Journal of Electronic Materials is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
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| Header | DbId: egs DbLabel: Engineering Source An: 33249173 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Extraction of Transport Dynamics in AlGaN/GaN HFETs Through Free Carrier Absorption. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Yuh-Renn+Wu%22">Yuh-Renn Wu</searchLink><relatesTo>1</relatesTo><i> yrwu@cc.ee.ntu.edu.tw</i><br /><searchLink fieldCode="AR" term="%22Hinckley%2C+John+M%2E%22">Hinckley, John M.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Singh%2C+Jasprit%22">Singh, Jasprit</searchLink><relatesTo>2</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Electronic+Materials%22">Journal of Electronic Materials</searchLink>. May2008, Vol. 37 Issue 5, p578-584. 7p. 1 Diagram, 3 Charts, 5 Graphs. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Heterostructures%22">Heterostructures</searchLink><br /><searchLink fieldCode="DE" term="%22Field-effect+transistors%22">Field-effect transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Monte+Carlo+method%22">Monte Carlo method</searchLink><br /><searchLink fieldCode="DE" term="%22Equations%22">Equations</searchLink><br /><searchLink fieldCode="DE" term="%22Dynamics%22">Dynamics</searchLink><br /><searchLink fieldCode="DE" term="%22Spectrum+analysis%22">Spectrum analysis</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: The importance of AlGaN/GaN heterostructure field-effect transistor (HFETs) in high-power high-frequency applications is now well established. However, detailed information on high-field mobilities, velocity-field relations, carrier temperature, and momentum and energy relaxation times are not available. In this paper we carry out theoretical simulations based on Monte Carlo techniques to show that transport dynamics can be effectively extracted through free carrier absorption. Using short pulses of infrared radiation, it is possible to obtain the velocity-field curve by fitting the absorption spectrum without heating the device. We show this by solving the classical transport equation and then verify the results through Monte Carlo simulations. With the model presented it would be possible to extract carrier dynamics from experimentally measured results. Our work suggests that free carrier absorption experiments on AlGaN/GaN HFETs would provide important transport information, which would be very useful in device design and modeling. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Journal of Electronic Materials is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1007/s11664-007-0320-4 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 7 StartPage: 578 Subjects: – SubjectFull: Heterostructures Type: general – SubjectFull: Field-effect transistors Type: general – SubjectFull: Monte Carlo method Type: general – SubjectFull: Equations Type: general – SubjectFull: Dynamics Type: general – SubjectFull: Spectrum analysis Type: general Titles: – TitleFull: Extraction of Transport Dynamics in AlGaN/GaN HFETs Through Free Carrier Absorption. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Yuh-Renn Wu – PersonEntity: Name: NameFull: Hinckley, John M. – PersonEntity: Name: NameFull: Singh, Jasprit IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 05 Text: May2008 Type: published Y: 2008 Identifiers: – Type: issn-print Value: 03615235 Numbering: – Type: volume Value: 37 – Type: issue Value: 5 Titles: – TitleFull: Journal of Electronic Materials Type: main |
| ResultId | 1 |
