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Detection of the interlayer at the GaAs-on-InGaP interface in MOVPE InGaP/GaAs by the dark field method.

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Title: Detection of the interlayer at the GaAs-on-InGaP interface in MOVPE InGaP/GaAs by the dark field method.
Authors: Frigeri, C.1 frigeri@imem.cnr.it, Attolini, G.1, Bosi, M.1, Pelosi, C.1, Germini, F.1
Source: Journal of Materials Science: Materials in Electronics. Oct2008 Supplement 1, Vol. 19, p107-110. 4p. 1 Chart, 4 Graphs.
Subjects: Metal organic chemical vapor deposition, Chemical vapor deposition, Contrast media, X-ray diffraction, Diagnostic imaging, Surface chemistry, Kinematics, Heterojunctions, Optical resolution
Abstract: The article shows the application of (200) dark field TEM to the detection and analysis of the extra interlayer that typically forms at the GaAs-on-InGaP interface in metal organic vapour phase epitaxy (MOVPE) InGaP/GaAs heterojunctions. Calculations of the dark field (DF) contrast function in the kinematical approximation show that the interlayer can be either GaAsP or InGaAsP for some values of the composition. Comparison with high-resolution X-ray diffraction results allowed to better estimate the composition ranges of the two compounds. The possible mechanisms responsible for the formation of either GaAsP or InGaAsP are briefly discussed. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Detection of the interlayer at the GaAs-on-InGaP interface in MOVPE InGaP/GaAs by the dark field method.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>. Oct2008 Supplement 1, Vol. 19, p107-110. 4p. 1 Chart, 4 Graphs.
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  Data: <searchLink fieldCode="DE" term="%22Metal+organic+chemical+vapor+deposition%22">Metal organic chemical vapor deposition</searchLink><br /><searchLink fieldCode="DE" term="%22Chemical+vapor+deposition%22">Chemical vapor deposition</searchLink><br /><searchLink fieldCode="DE" term="%22Contrast+media%22">Contrast media</searchLink><br /><searchLink fieldCode="DE" term="%22X-ray+diffraction%22">X-ray diffraction</searchLink><br /><searchLink fieldCode="DE" term="%22Diagnostic+imaging%22">Diagnostic imaging</searchLink><br /><searchLink fieldCode="DE" term="%22Surface+chemistry%22">Surface chemistry</searchLink><br /><searchLink fieldCode="DE" term="%22Kinematics%22">Kinematics</searchLink><br /><searchLink fieldCode="DE" term="%22Heterojunctions%22">Heterojunctions</searchLink><br /><searchLink fieldCode="DE" term="%22Optical+resolution%22">Optical resolution</searchLink>
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  Data: The article shows the application of (200) dark field TEM to the detection and analysis of the extra interlayer that typically forms at the GaAs-on-InGaP interface in metal organic vapour phase epitaxy (MOVPE) InGaP/GaAs heterojunctions. Calculations of the dark field (DF) contrast function in the kinematical approximation show that the interlayer can be either GaAsP or InGaAsP for some values of the composition. Comparison with high-resolution X-ray diffraction results allowed to better estimate the composition ranges of the two compounds. The possible mechanisms responsible for the formation of either GaAsP or InGaAsP are briefly discussed. [ABSTRACT FROM AUTHOR]
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  Data: <i>Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1007/s10854-007-9556-2
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        Text: English
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      – SubjectFull: Chemical vapor deposition
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      – SubjectFull: Contrast media
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      – SubjectFull: Optical resolution
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      – TitleFull: Detection of the interlayer at the GaAs-on-InGaP interface in MOVPE InGaP/GaAs by the dark field method.
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              Text: Oct2008 Supplement 1
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