Phase behavior and kinetics of a new bond-order potential for silicon
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| Title: | Phase behavior and kinetics of a new bond-order potential for silicon |
|---|---|
| Authors: | Schelling, Patrick K.1 pschell@mail.ucf.edu |
| Source: | Computational Materials Science. Dec2008, Vol. 44 Issue 2, p274-279. 6p. |
| Subjects: | Silicon research, Phase transitions, Thermodynamics, Chemical kinetics, Molecular dynamics, Simulation methods & models, Thermodynamic potentials |
| Abstract: | Abstract: We investigate the thermodynamics and kinetics of a new bond-order potential for silicon recently published by Kumagai et al. [T. Kumagai, S. Izumi, S. Hara, S. Sakai, Comp. Mater. Sci. 39 (2007) 457]. This new potential is modified from the standard Tersoff potential. We find that the model performs extremely well in describing the crystalline, liquid, and amorphous phases. The phase transitions are also studied using the new bond-order potential. Comparison is made to previously-published results obtained using the Tersoff, Stillinger–Weber and environment-dependent interatomic potentials for silicon, and also experiment. The new bond-order potential is found to perform much better that the Tersoff and environment-dependent interatomic potentials, and at least as well as the Stillinger–Weber potential. In one respect, the new potential appears to be significantly superior to other empirical potentials. In particular, the structure of the liquid phase predicted using the new bond-order potential seems to be in better agreement with experiment. An amorphous phase is readily formed from the quenched melt. However, it is unclear whether the new potential provides a better description of amorphous silicon than other popular empirical potentials. [Copyright &y& Elsevier] |
| Copyright of Computational Materials Science is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 35202918 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Phase behavior and kinetics of a new bond-order potential for silicon – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Schelling%2C+Patrick+K%2E%22">Schelling, Patrick K.</searchLink><relatesTo>1</relatesTo><i> pschell@mail.ucf.edu</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Computational+Materials+Science%22">Computational Materials Science</searchLink>. Dec2008, Vol. 44 Issue 2, p274-279. 6p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Silicon+research%22">Silicon research</searchLink><br /><searchLink fieldCode="DE" term="%22Phase+transitions%22">Phase transitions</searchLink><br /><searchLink fieldCode="DE" term="%22Thermodynamics%22">Thermodynamics</searchLink><br /><searchLink fieldCode="DE" term="%22Chemical+kinetics%22">Chemical kinetics</searchLink><br /><searchLink fieldCode="DE" term="%22Molecular+dynamics%22">Molecular dynamics</searchLink><br /><searchLink fieldCode="DE" term="%22Simulation+methods+%26+models%22">Simulation methods & models</searchLink><br /><searchLink fieldCode="DE" term="%22Thermodynamic+potentials%22">Thermodynamic potentials</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Abstract: We investigate the thermodynamics and kinetics of a new bond-order potential for silicon recently published by Kumagai et al. [T. Kumagai, S. Izumi, S. Hara, S. Sakai, Comp. Mater. Sci. 39 (2007) 457]. This new potential is modified from the standard Tersoff potential. We find that the model performs extremely well in describing the crystalline, liquid, and amorphous phases. The phase transitions are also studied using the new bond-order potential. Comparison is made to previously-published results obtained using the Tersoff, Stillinger–Weber and environment-dependent interatomic potentials for silicon, and also experiment. The new bond-order potential is found to perform much better that the Tersoff and environment-dependent interatomic potentials, and at least as well as the Stillinger–Weber potential. In one respect, the new potential appears to be significantly superior to other empirical potentials. In particular, the structure of the liquid phase predicted using the new bond-order potential seems to be in better agreement with experiment. An amorphous phase is readily formed from the quenched melt. However, it is unclear whether the new potential provides a better description of amorphous silicon than other popular empirical potentials. [Copyright &y& Elsevier] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Computational Materials Science is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1016/j.commatsci.2008.03.023 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 6 StartPage: 274 Subjects: – SubjectFull: Silicon research Type: general – SubjectFull: Phase transitions Type: general – SubjectFull: Thermodynamics Type: general – SubjectFull: Chemical kinetics Type: general – SubjectFull: Molecular dynamics Type: general – SubjectFull: Simulation methods & models Type: general – SubjectFull: Thermodynamic potentials Type: general Titles: – TitleFull: Phase behavior and kinetics of a new bond-order potential for silicon Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Schelling, Patrick K. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 12 Text: Dec2008 Type: published Y: 2008 Identifiers: – Type: issn-print Value: 09270256 Numbering: – Type: volume Value: 44 – Type: issue Value: 2 Titles: – TitleFull: Computational Materials Science Type: main |
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