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Diffusion of phosphorus implanted in germanium

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Title: Diffusion of phosphorus implanted in germanium
Authors: Canneaux, Th.1 canneaux@iness.c-strasbourg.fr, Mathiot, D.1, Ponpon, J.P.1, Roques, S.1, Schmitt, S.1, Dubois, Ch.2
Source: Materials Science & Engineering: B. Dec2008, Vol. 154-155, p68-71. 4p.
Subjects: Diffusion, Phosphorus, Germanium compounds, Semiconductor doping, Ion implantation, Silicon nitride, Secondary ion mass spectrometry, Computer simulation
Abstract: Abstract: Diffusion experiments of phosphorus introduced by ion implantation in high purity germanium, bare or covered by silicon nitride have been performed at temperatures between 500°C and 720°C for times up to 4h. The distribution profiles of phosphorous have been determined by secondary ion mass spectroscopy. High thermal budget samples show a box-shaped profile and a brutal change in diffusion coefficient, indicating an enhanced diffusion at high concentration of phosphorus. The diffusion coefficient was estimated to 1.2×10−18 cm2 s−1 at 523°C using the double charged vacancies model. However, the poor agreement of computer simulations with the experimental curves indicates that this model is not fully suitable to describe phosphorus diffusion in germanium. Bare samples present a large phosphorus evaporation on annealing (up to 60% of the implanted dose for the highest thermal budget). Si3N4 encapsulation reduces this value to 40% for 4h annealing at 700°C (20% for 4h annealing at 523°C). [Copyright &y& Elsevier]
Copyright of Materials Science & Engineering: B is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 35611857
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Diffusion of phosphorus implanted in germanium
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  Data: <searchLink fieldCode="AR" term="%22Canneaux%2C+Th%2E%22">Canneaux, Th.</searchLink><relatesTo>1</relatesTo><i> canneaux@iness.c-strasbourg.fr</i><br /><searchLink fieldCode="AR" term="%22Mathiot%2C+D%2E%22">Mathiot, D.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Ponpon%2C+J%2EP%2E%22">Ponpon, J.P.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Roques%2C+S%2E%22">Roques, S.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Schmitt%2C+S%2E%22">Schmitt, S.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Dubois%2C+Ch%2E%22">Dubois, Ch.</searchLink><relatesTo>2</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Materials+Science+%26+Engineering%3A+B%22">Materials Science & Engineering: B</searchLink>. Dec2008, Vol. 154-155, p68-71. 4p.
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  Data: <searchLink fieldCode="DE" term="%22Diffusion%22">Diffusion</searchLink><br /><searchLink fieldCode="DE" term="%22Phosphorus%22">Phosphorus</searchLink><br /><searchLink fieldCode="DE" term="%22Germanium+compounds%22">Germanium compounds</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+doping%22">Semiconductor doping</searchLink><br /><searchLink fieldCode="DE" term="%22Ion+implantation%22">Ion implantation</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon+nitride%22">Silicon nitride</searchLink><br /><searchLink fieldCode="DE" term="%22Secondary+ion+mass+spectrometry%22">Secondary ion mass spectrometry</searchLink><br /><searchLink fieldCode="DE" term="%22Computer+simulation%22">Computer simulation</searchLink>
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  Data: Abstract: Diffusion experiments of phosphorus introduced by ion implantation in high purity germanium, bare or covered by silicon nitride have been performed at temperatures between 500°C and 720°C for times up to 4h. The distribution profiles of phosphorous have been determined by secondary ion mass spectroscopy. High thermal budget samples show a box-shaped profile and a brutal change in diffusion coefficient, indicating an enhanced diffusion at high concentration of phosphorus. The diffusion coefficient was estimated to 1.2×10−18 cm2 s−1 at 523°C using the double charged vacancies model. However, the poor agreement of computer simulations with the experimental curves indicates that this model is not fully suitable to describe phosphorus diffusion in germanium. Bare samples present a large phosphorus evaporation on annealing (up to 60% of the implanted dose for the highest thermal budget). Si3N4 encapsulation reduces this value to 40% for 4h annealing at 700°C (20% for 4h annealing at 523°C). [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
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  Data: <i>Copyright of Materials Science & Engineering: B is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1016/j.mseb.2008.08.004
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      – Code: eng
        Text: English
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        PageCount: 4
        StartPage: 68
    Subjects:
      – SubjectFull: Diffusion
        Type: general
      – SubjectFull: Phosphorus
        Type: general
      – SubjectFull: Germanium compounds
        Type: general
      – SubjectFull: Semiconductor doping
        Type: general
      – SubjectFull: Ion implantation
        Type: general
      – SubjectFull: Silicon nitride
        Type: general
      – SubjectFull: Secondary ion mass spectrometry
        Type: general
      – SubjectFull: Computer simulation
        Type: general
    Titles:
      – TitleFull: Diffusion of phosphorus implanted in germanium
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            NameFull: Canneaux, Th.
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            NameFull: Mathiot, D.
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            NameFull: Ponpon, J.P.
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            NameFull: Roques, S.
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            NameFull: Schmitt, S.
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            – D: 05
              M: 12
              Text: Dec2008
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              Y: 2008
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              Value: 154-155
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            – TitleFull: Materials Science & Engineering: B
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