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The use of extended-defect dissolution as a probe for stress-induced interstitial diffusion anisotropy

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Title: The use of extended-defect dissolution as a probe for stress-induced interstitial diffusion anisotropy
Authors: Castrillo, P.1 Pedro.Castrillo@tel.uva.es, Pinacho, R.1, Jaraiz, M.1, Rubio, J.E.1, Singer, J.2
Source: Materials Science & Engineering: B. Dec2008, Vol. 154-155, p260-263. 4p.
Subjects: Point defects, Diffusion, Anisotropy, Strains & stresses (Mechanics), Silicon, Monte Carlo method
Abstract: Abstract: In this paper, the influence of biaxial strain-induced diffusion anisotropy on the evolution of extended defects in silicon has been analyzed. Point-defect diffusion anisotropy has been modeled and implemented within an atomistic kinetic Monte Carlo framework. The anneal of {311}-defects has been simulated for self-interstitial diffusion anisotropies varying within the plausible ranges. From these simulations, it is observed that diffusion anisotropy has a significant effect on the competition between defect ripening and dissolution. In particular, it is shown that the plot of {311} density versus {311} mean size could be used to check for the existence of self-interstitial diffusion anisotropy. [Copyright &y& Elsevier]
Copyright of Materials Science & Engineering: B is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 35611899
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: The use of extended-defect dissolution as a probe for stress-induced interstitial diffusion anisotropy
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  Data: <searchLink fieldCode="AR" term="%22Castrillo%2C+P%2E%22">Castrillo, P.</searchLink><relatesTo>1</relatesTo><i> Pedro.Castrillo@tel.uva.es</i><br /><searchLink fieldCode="AR" term="%22Pinacho%2C+R%2E%22">Pinacho, R.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Jaraiz%2C+M%2E%22">Jaraiz, M.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Rubio%2C+J%2EE%2E%22">Rubio, J.E.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Singer%2C+J%2E%22">Singer, J.</searchLink><relatesTo>2</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Materials+Science+%26+Engineering%3A+B%22">Materials Science & Engineering: B</searchLink>. Dec2008, Vol. 154-155, p260-263. 4p.
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  Data: <searchLink fieldCode="DE" term="%22Point+defects%22">Point defects</searchLink><br /><searchLink fieldCode="DE" term="%22Diffusion%22">Diffusion</searchLink><br /><searchLink fieldCode="DE" term="%22Anisotropy%22">Anisotropy</searchLink><br /><searchLink fieldCode="DE" term="%22Strains+%26+stresses+%28Mechanics%29%22">Strains & stresses (Mechanics)</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon%22">Silicon</searchLink><br /><searchLink fieldCode="DE" term="%22Monte+Carlo+method%22">Monte Carlo method</searchLink>
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  Data: Abstract: In this paper, the influence of biaxial strain-induced diffusion anisotropy on the evolution of extended defects in silicon has been analyzed. Point-defect diffusion anisotropy has been modeled and implemented within an atomistic kinetic Monte Carlo framework. The anneal of {311}-defects has been simulated for self-interstitial diffusion anisotropies varying within the plausible ranges. From these simulations, it is observed that diffusion anisotropy has a significant effect on the competition between defect ripening and dissolution. In particular, it is shown that the plot of {311} density versus {311} mean size could be used to check for the existence of self-interstitial diffusion anisotropy. [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Materials Science & Engineering: B is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1016/j.mseb.2008.09.036
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      – Code: eng
        Text: English
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      Pagination:
        PageCount: 4
        StartPage: 260
    Subjects:
      – SubjectFull: Point defects
        Type: general
      – SubjectFull: Diffusion
        Type: general
      – SubjectFull: Anisotropy
        Type: general
      – SubjectFull: Strains & stresses (Mechanics)
        Type: general
      – SubjectFull: Silicon
        Type: general
      – SubjectFull: Monte Carlo method
        Type: general
    Titles:
      – TitleFull: The use of extended-defect dissolution as a probe for stress-induced interstitial diffusion anisotropy
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            NameFull: Castrillo, P.
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            NameFull: Pinacho, R.
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            NameFull: Jaraiz, M.
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            NameFull: Rubio, J.E.
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            NameFull: Singer, J.
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            – D: 05
              M: 12
              Text: Dec2008
              Type: published
              Y: 2008
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              Value: 09215107
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              Value: 154-155
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            – TitleFull: Materials Science & Engineering: B
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