The use of extended-defect dissolution as a probe for stress-induced interstitial diffusion anisotropy
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| Title: | The use of extended-defect dissolution as a probe for stress-induced interstitial diffusion anisotropy |
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| Authors: | Castrillo, P.1 Pedro.Castrillo@tel.uva.es, Pinacho, R.1, Jaraiz, M.1, Rubio, J.E.1, Singer, J.2 |
| Source: | Materials Science & Engineering: B. Dec2008, Vol. 154-155, p260-263. 4p. |
| Subjects: | Point defects, Diffusion, Anisotropy, Strains & stresses (Mechanics), Silicon, Monte Carlo method |
| Abstract: | Abstract: In this paper, the influence of biaxial strain-induced diffusion anisotropy on the evolution of extended defects in silicon has been analyzed. Point-defect diffusion anisotropy has been modeled and implemented within an atomistic kinetic Monte Carlo framework. The anneal of {311}-defects has been simulated for self-interstitial diffusion anisotropies varying within the plausible ranges. From these simulations, it is observed that diffusion anisotropy has a significant effect on the competition between defect ripening and dissolution. In particular, it is shown that the plot of {311} density versus {311} mean size could be used to check for the existence of self-interstitial diffusion anisotropy. [Copyright &y& Elsevier] |
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| Database: | Engineering Source |
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