View in EDS

Electrical Characterization and Small-Signal Modeling of InAs/A1Sb HEMTs for Low-Noise and High-Frequency Applications.

Saved in:
Bibliographic Details
Title: Electrical Characterization and Small-Signal Modeling of InAs/A1Sb HEMTs for Low-Noise and High-Frequency Applications.
Authors: Malmkvist, Mikael1, Lefebvre, Eric2, Borg, Malin3, Desplanque, Ludovic4, Wallart, Xavier4, Dambrine, Gilles4, Bollaert, Sylvain4, Grahn, Jan5 jan.grahn@chalmers.se
Source: IEEE Transactions on Microwave Theory & Techniques. Dec2008 Part 1 of 2, Vol. 56 Issue 12, p2685-2691. 7p. 2 Charts, 8 Graphs.
Subjects: Oscillations, Noise, Transistors, Electric power consumption, Electronics, Semiconductors
Abstract: Electrical characterization and modeling of 2 x 50 µm gatewidth InAs/AISb HEMTs with 225 nm gatelength have been performed. The fabricated devices exhibited a transconductance gm of 650 mS/mm, an extrinsic cutoff frequency fT and an extrinsic maximum frequency of oscillation fmax of 120 and 90 GHz, respectively, already at a low VDS of 0.2 V. A minimum noise figure less than 1 dB between 2-18 GHz was achieved at a dc power consumption of only 10 mW/mm. This demonstrates the potential of InAs/AISb HEMTs for low-power, low-noise applications. To account for the elevated gate-leakage current IG in the narrow-bandgap InAs/AlSb HEMT, the conventional field-effect transistor small-signal model has been extended. The relatively high IG was modeled by shunting both Cgs and Cgd with Rgs and Rgd, respectively. As a result, the small-signal S-parameters were more accurately modeled, especially for frequencies below 10 GHz. Utilizing this modeling approach, excellent agreement was obtained between measured and modeled S-parameters, unilateral power gain U (Mason's gain) and stability factor K. [ABSTRACT FROM AUTHOR]
Copyright of IEEE Transactions on Microwave Theory & Techniques is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
Description
Abstract:Electrical characterization and modeling of 2 x 50 µm gatewidth InAs/AISb HEMTs with 225 nm gatelength have been performed. The fabricated devices exhibited a transconductance gm of 650 mS/mm, an extrinsic cutoff frequency fT and an extrinsic maximum frequency of oscillation fmax of 120 and 90 GHz, respectively, already at a low VDS of 0.2 V. A minimum noise figure less than 1 dB between 2-18 GHz was achieved at a dc power consumption of only 10 mW/mm. This demonstrates the potential of InAs/AISb HEMTs for low-power, low-noise applications. To account for the elevated gate-leakage current IG in the narrow-bandgap InAs/AlSb HEMT, the conventional field-effect transistor small-signal model has been extended. The relatively high IG was modeled by shunting both Cgs and Cgd with Rgs and Rgd, respectively. As a result, the small-signal S-parameters were more accurately modeled, especially for frequencies below 10 GHz. Utilizing this modeling approach, excellent agreement was obtained between measured and modeled S-parameters, unilateral power gain U (Mason's gain) and stability factor K. [ABSTRACT FROM AUTHOR]
ISSN:00189480
DOI:10.1109/TMTT.2008.2006798