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Characterization of low-temperature silicon nitride films produced by inductively coupled plasma chemical vapor deposition.

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Title: Characterization of low-temperature silicon nitride films produced by inductively coupled plasma chemical vapor deposition.
Authors: Xu, Q.1 q.xu@moreheadstate.edu, Ra, Y.2, Bachman, M.3, Li, G. P.3
Source: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films. Jan2009, Vol. 27 Issue 1, p145-156. 12p. 1 Black and White Photograph, 1 Diagram, 2 Charts, 8 Graphs.
Subjects: Silicon nitride, Chemical vapor deposition, Fourier transform infrared spectroscopy, Atomic force microscopy, Scanning probe microscopy, High temperatures
Abstract: Silicon nitride films were synthesized at 170 °C by using inductively coupled plasma chemical vapor deposition under three microwave power conditions of 500, 800, and 1000 W. The chemical, physical and electrical properties of the deposited silicon nitride films were characterized by Fourier transform infrared, wet etching, atomic force microscopy, ellipsometry, J-V, and C-V measurements of metal-insulator-semiconductor. The microwave power for film deposition is found to play an important role at the films’ properties. A high microwave power reduces the retention of hydrogen in a form of Si–H and N–H atomic bonds. The microwave power significantly affects the density of pin holes; the 800 W film has the lowest density of pin holes. In general, the low-temperature silicon nitride films possess better surface roughness than the conventional silicon nitride films produced at higher temperatures. The low-temperature silicon nitride films exhibit an abrupt breakdown, a characteristic of avalanche breakdown. The variation in breakdown strength is correlated with the change in pin-hole density, and the 800 W silicon nitride film possesses the highest breakdown strength. The microwave power has limited influences on leakage current and resistivity of the films. All the low-temperature silicon nitride films are characterized by high-density fixed charges and interface charge traps, of which both densities vary slightly with the microwave power for film deposition. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 36091996
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Characterization of low-temperature silicon nitride films produced by inductively coupled plasma chemical vapor deposition.
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  Data: <searchLink fieldCode="AR" term="%22Xu%2C+Q%2E%22">Xu, Q.</searchLink><relatesTo>1</relatesTo><i> q.xu@moreheadstate.edu</i><br /><searchLink fieldCode="AR" term="%22Ra%2C+Y%2E%22">Ra, Y.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Bachman%2C+M%2E%22">Bachman, M.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Li%2C+G%2E+P%2E%22">Li, G. P.</searchLink><relatesTo>3</relatesTo>
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  Data: <searchLink fieldCode="DE" term="%22Silicon+nitride%22">Silicon nitride</searchLink><br /><searchLink fieldCode="DE" term="%22Chemical+vapor+deposition%22">Chemical vapor deposition</searchLink><br /><searchLink fieldCode="DE" term="%22Fourier+transform+infrared+spectroscopy%22">Fourier transform infrared spectroscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Atomic+force+microscopy%22">Atomic force microscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Scanning+probe+microscopy%22">Scanning probe microscopy</searchLink><br /><searchLink fieldCode="DE" term="%22High+temperatures%22">High temperatures</searchLink>
– Name: Abstract
  Label: Abstract
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  Data: Silicon nitride films were synthesized at 170 °C by using inductively coupled plasma chemical vapor deposition under three microwave power conditions of 500, 800, and 1000 W. The chemical, physical and electrical properties of the deposited silicon nitride films were characterized by Fourier transform infrared, wet etching, atomic force microscopy, ellipsometry, J-V, and C-V measurements of metal-insulator-semiconductor. The microwave power for film deposition is found to play an important role at the films’ properties. A high microwave power reduces the retention of hydrogen in a form of Si–H and N–H atomic bonds. The microwave power significantly affects the density of pin holes; the 800 W film has the lowest density of pin holes. In general, the low-temperature silicon nitride films possess better surface roughness than the conventional silicon nitride films produced at higher temperatures. The low-temperature silicon nitride films exhibit an abrupt breakdown, a characteristic of avalanche breakdown. The variation in breakdown strength is correlated with the change in pin-hole density, and the 800 W silicon nitride film possesses the highest breakdown strength. The microwave power has limited influences on leakage current and resistivity of the films. All the low-temperature silicon nitride films are characterized by high-density fixed charges and interface charge traps, of which both densities vary slightly with the microwave power for film deposition. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
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  Group: Ab
  Data: <i>Copyright of Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1116/1.3054133
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      – Code: eng
        Text: English
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        PageCount: 12
        StartPage: 145
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      – SubjectFull: Silicon nitride
        Type: general
      – SubjectFull: Chemical vapor deposition
        Type: general
      – SubjectFull: Fourier transform infrared spectroscopy
        Type: general
      – SubjectFull: Atomic force microscopy
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      – SubjectFull: Scanning probe microscopy
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      – SubjectFull: High temperatures
        Type: general
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      – TitleFull: Characterization of low-temperature silicon nitride films produced by inductively coupled plasma chemical vapor deposition.
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            NameFull: Xu, Q.
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            NameFull: Ra, Y.
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              Text: Jan2009
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              Y: 2009
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            – TitleFull: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films
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