Dressed excitonic states and quantum interference in a three-level quantum dot ladder system.

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Title: Dressed excitonic states and quantum interference in a three-level quantum dot ladder system.
Authors: B D Gerardot, D Brunner, P A Dalgarno, K Karrai, A Badolato, P M Petroff, R J Warburton
Source: New Journal of Physics. Jan2009, Vol. 11 Issue 1, p13028-13028. 1p.
Subjects: Quantum dots, Exciton theory, Quantum interference, Electric fields, Dipole moments, Nonlinear optics, Optoelectronic devices
Abstract: We observe dressed states and quantum interference effects in a strongly driven three-level quantum dot ladder system. The effect of a strong coupling field on one dipole transition is measured by a weak probe field on the second dipole transition using differential reflection. When the coupling energy is much larger than both the homogeneous and inhomogeneous linewidths an Autler-Townes splitting is observed. Significant differences are observed when the transitions resonant with the strong and weak fields are swapped, particularly when the coupling energy is nearly equal to the measured linewidth. This result is attributed to quantum interference: destructive or constructive interference with modest visibility is observed depending on the pump/probe geometry. The data demonstrate that coherence of both the bi-exciton and the exciton is maintained in this solid-state system, even under intense illumination, which is crucial for prospects in quantum information processing and nonlinear optical devices. [ABSTRACT FROM AUTHOR]
Copyright of New Journal of Physics is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: We observe dressed states and quantum interference effects in a strongly driven three-level quantum dot ladder system. The effect of a strong coupling field on one dipole transition is measured by a weak probe field on the second dipole transition using differential reflection. When the coupling energy is much larger than both the homogeneous and inhomogeneous linewidths an Autler-Townes splitting is observed. Significant differences are observed when the transitions resonant with the strong and weak fields are swapped, particularly when the coupling energy is nearly equal to the measured linewidth. This result is attributed to quantum interference: destructive or constructive interference with modest visibility is observed depending on the pump/probe geometry. The data demonstrate that coherence of both the bi-exciton and the exciton is maintained in this solid-state system, even under intense illumination, which is crucial for prospects in quantum information processing and nonlinear optical devices. [ABSTRACT FROM AUTHOR]
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  Data: <i>Copyright of New Journal of Physics is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1088/1367-2630/11/1/013028
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        Text: English
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        Type: general
      – SubjectFull: Exciton theory
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      – SubjectFull: Quantum interference
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      – SubjectFull: Electric fields
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      – SubjectFull: Dipole moments
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      – SubjectFull: Nonlinear optics
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      – SubjectFull: Optoelectronic devices
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              Text: Jan2009
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