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Analysis of sulphurisation processes of electrodeposited S-rich CuIn(S,Se)2 layers for photovoltaic applications

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Title: Analysis of sulphurisation processes of electrodeposited S-rich CuIn(S,Se)2 layers for photovoltaic applications
Authors: Izquierdo-Roca, V.1, Fontané, X.1, Calvo-Barrio, L.1,2, Pérez-Rodríguez, A.1 perez-ro@el.ub.es, Morante, J.R.1, Álvarez-García, J.3, Duault, F.4, Parissi, L.4, Bermúdez, V.4
Source: Thin Solid Films. Feb2009, Vol. 517 Issue 7, p2264-2267. 4p.
Subjects: Copper compounds, Sulfides, Microstructure, Alloy plating, Photovoltaic cells, Raman effect, Scanning electron microscopy
Abstract: Abstract: This work reports a microstructural analysis of S-rich CuIn(S,Se)2 layers produced by electrodeposition of CuInSe2 precursors followed by annealing at 500 °C under sulphurising conditions, as function of the annealing time (t ann). The characterisation of the layers by Raman scattering (RS) and Scanning Electron Microscopy (SEM) techniques has allowed to observe a strong dependence of the layer microstructure and the secondary phases synthesised during the sulphurising step on the annealing parameters. The experimental data show the existence of two distinct regimes: For t ann <20 min, increasing t ann leads to a significant improvement of the crystalline quality of the absorbers. For longer annealing times, the changes observed in the frequency of the main CuIn(S,Se)2 A1 mode in the Raman spectra have been attributed to a higher incorporation of S in the chalcopyrite lattice. The characterisation of devices fabricated with these absorbers has allowed to analyse the impact of the microstructural features on the parameters of the solar cells, observing the existence of a strong correlation between the solar cell parameters and the spectral features of the main Raman mode. [Copyright &y& Elsevier]
Copyright of Thin Solid Films is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
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  Data: &lt;searchLink fieldCode=&quot;JN&quot; term=&quot;%22Thin+Solid+Films%22&quot;&gt;Thin Solid Films&lt;/searchLink&gt;. Feb2009, Vol. 517 Issue 7, p2264-2267. 4p.
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  Data: Abstract: This work reports a microstructural analysis of S-rich CuIn(S,Se)2 layers produced by electrodeposition of CuInSe2 precursors followed by annealing at 500&#160;&#176;C under sulphurising conditions, as function of the annealing time (t ann). The characterisation of the layers by Raman scattering (RS) and Scanning Electron Microscopy (SEM) techniques has allowed to observe a strong dependence of the layer microstructure and the secondary phases synthesised during the sulphurising step on the annealing parameters. The experimental data show the existence of two distinct regimes: For t ann &lt;20&#160;min, increasing t ann leads to a significant improvement of the crystalline quality of the absorbers. For longer annealing times, the changes observed in the frequency of the main CuIn(S,Se)2 A1 mode in the Raman spectra have been attributed to a higher incorporation of S in the chalcopyrite lattice. The characterisation of devices fabricated with these absorbers has allowed to analyse the impact of the microstructural features on the parameters of the solar cells, observing the existence of a strong correlation between the solar cell parameters and the spectral features of the main Raman mode. [Copyright &amp;y&amp; Elsevier]
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  Data: &lt;i&gt;Copyright of Thin Solid Films is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder&#39;s express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.&lt;/i&gt; (Copyright applies to all Abstracts.)
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        Value: 10.1016/j.tsf.2008.10.103
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        Text: English
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      – SubjectFull: Sulfides
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      – SubjectFull: Microstructure
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      – SubjectFull: Raman effect
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      – SubjectFull: Scanning electron microscopy
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              Text: Feb2009
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