Key role of Cu–Se binary phases in electrodeposited CuInSe2 precursors on final distribution of Cu–S phases in CuIn(S,Se)2 absorbers
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| Title: | Key role of Cu–Se binary phases in electrodeposited CuInSe |
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| Authors: | Saucedo, E.1, Izquierdo-Roca, V.2, Ruiz, C.M.1, Parissi, L.1, Broussillou, C.1, Grand, P.-P.1, Jaime-Ferrer, J.S.1, Pérez-Rodríguez, A.2, Morante, J.R.2, Bermúdez, V.1 veronica.bermudez@edf.fr |
| Source: | Thin Solid Films. Feb2009, Vol. 517 Issue 7, p2268-2271. 4p. |
| Subjects: | Chalcopyrite, Solar cells, Copper sulfide, Electrophoretic deposition, Raman spectroscopy, Binary metallic systems, Alloy plating |
| Abstract: | Abstract: Using micro-Raman spectroscopy, we demonstrate that the formation of the CuS binary phase in CISEL™ cells absorbers is highly determined by the presence of a Cu–Se binary phase in the precursors and depends on the Cu/In ratio. A selective sulphurization mechanism of the Cu–Se phase is proposed as the origin of CuS platelets. For low Cu/In ratio both binaries are associated to the surface and do not affect the device performance. Conversely, when the binary phase in the precursor is present close to the back contact (for high Cu/In ratio), the CuS binary phase is also formed at this region after sulphurization. Strongly associated to this Cu-rich binary phase, a spinel-type phase is also observed in the sulphurized samples. This phase has n-type conductivity, which has a strong impact on the characteristics of the solar cells. The relationship between the presence of these phases and the electrical properties of the final devices is described, showing that the reduction of the V oc and the increase of the R s are related to the formation of a back diode by the spinel-type layer, as consequence of an undesirable n-p-n structure. [Copyright &y& Elsevier] |
| Copyright of Thin Solid Films is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 36404405 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Key role of Cu–Se binary phases in electrodeposited CuInSe<subscript>2</subscript> precursors on final distribution of Cu–S phases in CuIn(S,Se)<subscript>2</subscript> absorbers – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Saucedo%2C+E%2E%22">Saucedo, E.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Izquierdo-Roca%2C+V%2E%22">Izquierdo-Roca, V.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Ruiz%2C+C%2EM%2E%22">Ruiz, C.M.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Parissi%2C+L%2E%22">Parissi, L.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Broussillou%2C+C%2E%22">Broussillou, C.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Grand%2C+P%2E-P%2E%22">Grand, P.-P.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Jaime-Ferrer%2C+J%2ES%2E%22">Jaime-Ferrer, J.S.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Pérez-Rodríguez%2C+A%2E%22">Pérez-Rodríguez, A.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Morante%2C+J%2ER%2E%22">Morante, J.R.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Bermúdez%2C+V%2E%22">Bermúdez, V.</searchLink><relatesTo>1</relatesTo><i> veronica.bermudez@edf.fr</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Thin+Solid+Films%22">Thin Solid Films</searchLink>. Feb2009, Vol. 517 Issue 7, p2268-2271. 4p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Chalcopyrite%22">Chalcopyrite</searchLink><br /><searchLink fieldCode="DE" term="%22Solar+cells%22">Solar cells</searchLink><br /><searchLink fieldCode="DE" term="%22Copper+sulfide%22">Copper sulfide</searchLink><br /><searchLink fieldCode="DE" term="%22Electrophoretic+deposition%22">Electrophoretic deposition</searchLink><br /><searchLink fieldCode="DE" term="%22Raman+spectroscopy%22">Raman spectroscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Binary+metallic+systems%22">Binary metallic systems</searchLink><br /><searchLink fieldCode="DE" term="%22Alloy+plating%22">Alloy plating</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Abstract: Using micro-Raman spectroscopy, we demonstrate that the formation of the CuS binary phase in CISEL™ cells absorbers is highly determined by the presence of a Cu–Se binary phase in the precursors and depends on the Cu/In ratio. A selective sulphurization mechanism of the Cu–Se phase is proposed as the origin of CuS platelets. For low Cu/In ratio both binaries are associated to the surface and do not affect the device performance. Conversely, when the binary phase in the precursor is present close to the back contact (for high Cu/In ratio), the CuS binary phase is also formed at this region after sulphurization. Strongly associated to this Cu-rich binary phase, a spinel-type phase is also observed in the sulphurized samples. This phase has n-type conductivity, which has a strong impact on the characteristics of the solar cells. The relationship between the presence of these phases and the electrical properties of the final devices is described, showing that the reduction of the V oc and the increase of the R s are related to the formation of a back diode by the spinel-type layer, as consequence of an undesirable n-p-n structure. [Copyright &y& Elsevier] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Thin Solid Films is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1016/j.tsf.2008.10.144 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 4 StartPage: 2268 Subjects: – SubjectFull: Chalcopyrite Type: general – SubjectFull: Solar cells Type: general – SubjectFull: Copper sulfide Type: general – SubjectFull: Electrophoretic deposition Type: general – SubjectFull: Raman spectroscopy Type: general – SubjectFull: Binary metallic systems Type: general – SubjectFull: Alloy plating Type: general Titles: – TitleFull: Key role of Cu–Se binary phases in electrodeposited CuInSe2 precursors on final distribution of Cu–S phases in CuIn(S,Se)2 absorbers Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Saucedo, E. – PersonEntity: Name: NameFull: Izquierdo-Roca, V. – PersonEntity: Name: NameFull: Ruiz, C.M. – PersonEntity: Name: NameFull: Parissi, L. – PersonEntity: Name: NameFull: Broussillou, C. – PersonEntity: Name: NameFull: Grand, P.-P. – PersonEntity: Name: NameFull: Jaime-Ferrer, J.S. – PersonEntity: Name: NameFull: Pérez-Rodríguez, A. – PersonEntity: Name: NameFull: Morante, J.R. – PersonEntity: Name: NameFull: Bermúdez, V. IsPartOfRelationships: – BibEntity: Dates: – D: 02 M: 02 Text: Feb2009 Type: published Y: 2009 Identifiers: – Type: issn-print Value: 00406090 Numbering: – Type: volume Value: 517 – Type: issue Value: 7 Titles: – TitleFull: Thin Solid Films Type: main |
| ResultId | 1 |