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Grain-boundary types in chalcopyrite-type thin films and their correlations with film texture and electrical properties

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Title: Grain-boundary types in chalcopyrite-type thin films and their correlations with film texture and electrical properties
Authors: Abou-Ras, D.1 daniel.abou-ras@hmi.de, Koch, C.T.2, Küstner, V.2, van Aken, P.A.2, Jahn, U.3, Contreras, M.A.4, Caballero, R.1, Kaufmann, C.A.1, Scheer, R.1, Unold, T.1, Schock, H.-W.1
Source: Thin Solid Films. Feb2009, Vol. 517 Issue 7, p2545-2549. 5p.
Subjects: Electric properties of thin films, Chalcopyrite, Crystal grain boundaries, Crystal texture, Solar cells, Thin film devices, Cathodoluminescence, Transmission electron microscopy
Abstract: Abstract: Grain boundaries in chalcopyrite-type thin films can be divided into (near) Σ3 (twin) and random boundaries. It is shown that Σ3 grain boundaries in a 110/201-textured Cu(In,Ga)Se2 film may exhibit a preferential orientation perpendicular to the substrate, however, that this preferential orientation is not a common feature in 110/201-textured films. In general, it is not possible to draw conclusions about the Cu(In,Ga)Se2 thin-film microstructure based on its texture and vice versa. From cathodoluminescence and electron backscatter diffraction measurements acquired on the same area of a CuInS2 cross-section sample, it is concluded that the density of non-radiating recombination centers at random boundaries is substantially larger than that at Σ3 (twin) boundaries. Evaluation of reconstructed phase images from transmission electron microscopy focus series revealed considerably larger mean-inner potential wells at a random boundary as compared with Σ3 (twin) boundaries. [Copyright &y& Elsevier]
Copyright of Thin Solid Films is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 36404472
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Grain-boundary types in chalcopyrite-type thin films and their correlations with film texture and electrical properties
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  Data: <searchLink fieldCode="AR" term="%22Abou-Ras%2C+D%2E%22">Abou-Ras, D.</searchLink><relatesTo>1</relatesTo><i> daniel.abou-ras@hmi.de</i><br /><searchLink fieldCode="AR" term="%22Koch%2C+C%2ET%2E%22">Koch, C.T.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Küstner%2C+V%2E%22">Küstner, V.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22van+Aken%2C+P%2EA%2E%22">van Aken, P.A.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Jahn%2C+U%2E%22">Jahn, U.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Contreras%2C+M%2EA%2E%22">Contreras, M.A.</searchLink><relatesTo>4</relatesTo><br /><searchLink fieldCode="AR" term="%22Caballero%2C+R%2E%22">Caballero, R.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Kaufmann%2C+C%2EA%2E%22">Kaufmann, C.A.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Scheer%2C+R%2E%22">Scheer, R.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Unold%2C+T%2E%22">Unold, T.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Schock%2C+H%2E-W%2E%22">Schock, H.-W.</searchLink><relatesTo>1</relatesTo>
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  Data: <searchLink fieldCode="DE" term="%22Electric+properties+of+thin+films%22">Electric properties of thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Chalcopyrite%22">Chalcopyrite</searchLink><br /><searchLink fieldCode="DE" term="%22Crystal+grain+boundaries%22">Crystal grain boundaries</searchLink><br /><searchLink fieldCode="DE" term="%22Crystal+texture%22">Crystal texture</searchLink><br /><searchLink fieldCode="DE" term="%22Solar+cells%22">Solar cells</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+film+devices%22">Thin film devices</searchLink><br /><searchLink fieldCode="DE" term="%22Cathodoluminescence%22">Cathodoluminescence</searchLink><br /><searchLink fieldCode="DE" term="%22Transmission+electron+microscopy%22">Transmission electron microscopy</searchLink>
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  Data: Abstract: Grain boundaries in chalcopyrite-type thin films can be divided into (near) Σ3 (twin) and random boundaries. It is shown that Σ3 grain boundaries in a 110/201-textured Cu(In,Ga)Se2 film may exhibit a preferential orientation perpendicular to the substrate, however, that this preferential orientation is not a common feature in 110/201-textured films. In general, it is not possible to draw conclusions about the Cu(In,Ga)Se2 thin-film microstructure based on its texture and vice versa. From cathodoluminescence and electron backscatter diffraction measurements acquired on the same area of a CuInS2 cross-section sample, it is concluded that the density of non-radiating recombination centers at random boundaries is substantially larger than that at Σ3 (twin) boundaries. Evaluation of reconstructed phase images from transmission electron microscopy focus series revealed considerably larger mean-inner potential wells at a random boundary as compared with Σ3 (twin) boundaries. [Copyright &y& Elsevier]
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  Data: <i>Copyright of Thin Solid Films is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1016/j.tsf.2008.11.044
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      – Code: eng
        Text: English
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        PageCount: 5
        StartPage: 2545
    Subjects:
      – SubjectFull: Electric properties of thin films
        Type: general
      – SubjectFull: Chalcopyrite
        Type: general
      – SubjectFull: Crystal grain boundaries
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      – SubjectFull: Crystal texture
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      – SubjectFull: Solar cells
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      – SubjectFull: Thin film devices
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      – SubjectFull: Cathodoluminescence
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      – SubjectFull: Transmission electron microscopy
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              Text: Feb2009
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