Influence of grain boundaries on current collection in Cu(In,Ga)Se2 thin-film solar cells
Saved in:
| Title: | Influence of grain boundaries on current collection in Cu(In,Ga)Se |
|---|---|
| Authors: | Nichterwitz, M.1 melanie.nichterwitz@helmholtz-berlin.de, Abou-Ras, D.1, Sakurai, K.2, Bundesmann, J.1, Unold, T.1, Scheer, R.1, Schock, H.W.1 |
| Source: | Thin Solid Films. Feb2009, Vol. 517 Issue 7, p2554-2557. 4p. |
| Subjects: | Crystal grain boundaries, Chalcopyrite, Solar cells, Electron backscattering, Electron beams, Scanning electron microscopes, Microstructure, Thin film devices |
| Abstract: | Abstract: Electron backscatter diffraction (EBSD) in combination with electron beam-induced current (EBIC) measurements in a scanning electron microscope were used to investigate grain boundaries in Cu(In,Ga)Se2 thin-film solar cells. The measurements were performed on polished cross sections of working devices. EBIC maps enable the analysis of charge-carrier collection with a high spatial resolution and the extraction of the local minority charge-carrier diffusion length. EBSD images reveal the microstructure of the Cu(In,Ga)Se2 absorber-layer. A combination of these techniques makes it possible to investigate the influence of the microstructure of the Cu(In,Ga)Se2 absorber-layer and especially of grain boundaries on charge-carrier collection. It is shown that collection properties are grain specific and that there are positions of grain boundaries exhibiting a reduced EBIC signal. These grain boundaries might be regions of enhanced recombination with a recombination velocity of about 1×104 cm/s. [Copyright &y& Elsevier] |
| Copyright of Thin Solid Films is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
|---|---|
| Header | DbId: egs DbLabel: Engineering Source An: 36404474 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
| IllustrationInfo | |
| Items | – Name: Title Label: Title Group: Ti Data: Influence of grain boundaries on current collection in Cu(In,Ga)Se<subscript>2</subscript> thin-film solar cells – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Nichterwitz%2C+M%2E%22">Nichterwitz, M.</searchLink><relatesTo>1</relatesTo><i> melanie.nichterwitz@helmholtz-berlin.de</i><br /><searchLink fieldCode="AR" term="%22Abou-Ras%2C+D%2E%22">Abou-Ras, D.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Sakurai%2C+K%2E%22">Sakurai, K.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Bundesmann%2C+J%2E%22">Bundesmann, J.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Unold%2C+T%2E%22">Unold, T.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Scheer%2C+R%2E%22">Scheer, R.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Schock%2C+H%2EW%2E%22">Schock, H.W.</searchLink><relatesTo>1</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Thin+Solid+Films%22">Thin Solid Films</searchLink>. Feb2009, Vol. 517 Issue 7, p2554-2557. 4p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Crystal+grain+boundaries%22">Crystal grain boundaries</searchLink><br /><searchLink fieldCode="DE" term="%22Chalcopyrite%22">Chalcopyrite</searchLink><br /><searchLink fieldCode="DE" term="%22Solar+cells%22">Solar cells</searchLink><br /><searchLink fieldCode="DE" term="%22Electron+backscattering%22">Electron backscattering</searchLink><br /><searchLink fieldCode="DE" term="%22Electron+beams%22">Electron beams</searchLink><br /><searchLink fieldCode="DE" term="%22Scanning+electron+microscopes%22">Scanning electron microscopes</searchLink><br /><searchLink fieldCode="DE" term="%22Microstructure%22">Microstructure</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+film+devices%22">Thin film devices</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Abstract: Electron backscatter diffraction (EBSD) in combination with electron beam-induced current (EBIC) measurements in a scanning electron microscope were used to investigate grain boundaries in Cu(In,Ga)Se2 thin-film solar cells. The measurements were performed on polished cross sections of working devices. EBIC maps enable the analysis of charge-carrier collection with a high spatial resolution and the extraction of the local minority charge-carrier diffusion length. EBSD images reveal the microstructure of the Cu(In,Ga)Se2 absorber-layer. A combination of these techniques makes it possible to investigate the influence of the microstructure of the Cu(In,Ga)Se2 absorber-layer and especially of grain boundaries on charge-carrier collection. It is shown that collection properties are grain specific and that there are positions of grain boundaries exhibiting a reduced EBIC signal. These grain boundaries might be regions of enhanced recombination with a recombination velocity of about 1×104 cm/s. [Copyright &y& Elsevier] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Thin Solid Films is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=36404474 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1016/j.tsf.2008.11.064 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 4 StartPage: 2554 Subjects: – SubjectFull: Crystal grain boundaries Type: general – SubjectFull: Chalcopyrite Type: general – SubjectFull: Solar cells Type: general – SubjectFull: Electron backscattering Type: general – SubjectFull: Electron beams Type: general – SubjectFull: Scanning electron microscopes Type: general – SubjectFull: Microstructure Type: general – SubjectFull: Thin film devices Type: general Titles: – TitleFull: Influence of grain boundaries on current collection in Cu(In,Ga)Se2 thin-film solar cells Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Nichterwitz, M. – PersonEntity: Name: NameFull: Abou-Ras, D. – PersonEntity: Name: NameFull: Sakurai, K. – PersonEntity: Name: NameFull: Bundesmann, J. – PersonEntity: Name: NameFull: Unold, T. – PersonEntity: Name: NameFull: Scheer, R. – PersonEntity: Name: NameFull: Schock, H.W. IsPartOfRelationships: – BibEntity: Dates: – D: 02 M: 02 Text: Feb2009 Type: published Y: 2009 Identifiers: – Type: issn-print Value: 00406090 Numbering: – Type: volume Value: 517 – Type: issue Value: 7 Titles: – TitleFull: Thin Solid Films Type: main |
| ResultId | 1 |
