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An experimental setup for exciting semiconductors and dielectrics with picosecond electron-beam and electric-field pulses.

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Title: An experimental setup for exciting semiconductors and dielectrics with picosecond electron-beam and electric-field pulses.
Authors: Nasibov, A.1, Berezhnoi, K.1, Shapkin, P.1, Reutova, A.2, Shunailov, S.2, Yalandin, M.2
Source: Instruments & Experimental Techniques. Jan2009, Vol. 52 Issue 1, p65-73. 9p. 5 Diagrams, 6 Graphs.
Subjects: Semiconductor analysis, Semiconductor characterization, Electric potential, Density functionals, Dielectrics research
Abstract: An experimental facility for forming high-voltage pulses with amplitudes of 30–250 kV and durations of 100–500 ps and electron beams with a current density of up to 1000 A/cm2 is described. The facility was built using the principle of energy compression of a pulse from a nanosecond high-voltage generator accompanied by the subsequent pulse sharpening and cutting. The setup is equipped with two test coaxial chambers for exciting radiation in semiconductor crystals by an electron beam or an electric field in air at atmospheric pressure and T = 300 K. Generation of laser radiation in the visible range under field and electron pumping was attained in ZnSSe, ZnSe, ZnCdS, and CdS (462, 480, 515, and 525 nm, respectively). Under the exposure to an electric field (up to 106 V cm−1), the lasing region was as large as 300–500μm. The radiation divergence was within 5°. The maximum integral radiation power (6 kW at λ = 480 nm) was obtained under field pumping of a zinc selenide sample with a single dielectric mirror. [ABSTRACT FROM AUTHOR]
Copyright of Instruments & Experimental Techniques is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: An experimental setup for exciting semiconductors and dielectrics with picosecond electron-beam and electric-field pulses.
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  Data: <searchLink fieldCode="JN" term="%22Instruments+%26+Experimental+Techniques%22">Instruments & Experimental Techniques</searchLink>. Jan2009, Vol. 52 Issue 1, p65-73. 9p. 5 Diagrams, 6 Graphs.
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  Data: <searchLink fieldCode="DE" term="%22Semiconductor+analysis%22">Semiconductor analysis</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+characterization%22">Semiconductor characterization</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+potential%22">Electric potential</searchLink><br /><searchLink fieldCode="DE" term="%22Density+functionals%22">Density functionals</searchLink><br /><searchLink fieldCode="DE" term="%22Dielectrics+research%22">Dielectrics research</searchLink>
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  Data: An experimental facility for forming high-voltage pulses with amplitudes of 30–250 kV and durations of 100–500 ps and electron beams with a current density of up to 1000 A/cm2 is described. The facility was built using the principle of energy compression of a pulse from a nanosecond high-voltage generator accompanied by the subsequent pulse sharpening and cutting. The setup is equipped with two test coaxial chambers for exciting radiation in semiconductor crystals by an electron beam or an electric field in air at atmospheric pressure and T = 300 K. Generation of laser radiation in the visible range under field and electron pumping was attained in ZnSSe, ZnSe, ZnCdS, and CdS (462, 480, 515, and 525 nm, respectively). Under the exposure to an electric field (up to 106 V cm−1), the lasing region was as large as 300–500μm. The radiation divergence was within 5°. The maximum integral radiation power (6 kW at λ = 480 nm) was obtained under field pumping of a zinc selenide sample with a single dielectric mirror. [ABSTRACT FROM AUTHOR]
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  Data: <i>Copyright of Instruments & Experimental Techniques is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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