Parametric Modeling and Optimization of Chemical Vapor Deposition Process.
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| Title: | Parametric Modeling and Optimization of Chemical Vapor Deposition Process. |
|---|---|
| Authors: | Po Ting Lin1, Jaluria, Yogesh1, Hae Chang Gea1 |
| Source: | Journal of Manufacturing Science & Engineering. Feb2009, Vol. 131 Issue 1, p0111-0117. 7p. 8 Graphs. |
| Subjects: | Chemical vapor deposition, Parameter estimation, Surfaces (Technology), Thin films, Silicon, Simulation methods & models |
| Abstract: | This paper focuses on the parametric modeling and optimization of the chemical vapor deposition (CVD) process for the deposition of thin films of silicon from silane in a vertical impinging CVD reactor. The parametric modeling using radial basis function for various functions, which is related to the deposition rate and uniformity of the thin films, is studied. These models are compared and validated with additional sampling data. Based on the parametric models, different optimization formulations for maximizing the deposition rate and the working areas of thin film are performed. [ABSTRACT FROM AUTHOR] |
| Copyright of Journal of Manufacturing Science & Engineering is the property of American Society of Mechanical Engineers and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 36998842 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Parametric Modeling and Optimization of Chemical Vapor Deposition Process. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Po+Ting+Lin%22">Po Ting Lin</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Jaluria%2C+Yogesh%22">Jaluria, Yogesh</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Hae+Chang+Gea%22">Hae Chang Gea</searchLink><relatesTo>1</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Manufacturing+Science+%26+Engineering%22">Journal of Manufacturing Science & Engineering</searchLink>. Feb2009, Vol. 131 Issue 1, p0111-0117. 7p. 8 Graphs. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Chemical+vapor+deposition%22">Chemical vapor deposition</searchLink><br /><searchLink fieldCode="DE" term="%22Parameter+estimation%22">Parameter estimation</searchLink><br /><searchLink fieldCode="DE" term="%22Surfaces+%28Technology%29%22">Surfaces (Technology)</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon%22">Silicon</searchLink><br /><searchLink fieldCode="DE" term="%22Simulation+methods+%26+models%22">Simulation methods & models</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: This paper focuses on the parametric modeling and optimization of the chemical vapor deposition (CVD) process for the deposition of thin films of silicon from silane in a vertical impinging CVD reactor. The parametric modeling using radial basis function for various functions, which is related to the deposition rate and uniformity of the thin films, is studied. These models are compared and validated with additional sampling data. Based on the parametric models, different optimization formulations for maximizing the deposition rate and the working areas of thin film are performed. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Journal of Manufacturing Science & Engineering is the property of American Society of Mechanical Engineers and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1115/1.3063689 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 7 StartPage: 0111 Subjects: – SubjectFull: Chemical vapor deposition Type: general – SubjectFull: Parameter estimation Type: general – SubjectFull: Surfaces (Technology) Type: general – SubjectFull: Thin films Type: general – SubjectFull: Silicon Type: general – SubjectFull: Simulation methods & models Type: general Titles: – TitleFull: Parametric Modeling and Optimization of Chemical Vapor Deposition Process. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Po Ting Lin – PersonEntity: Name: NameFull: Jaluria, Yogesh – PersonEntity: Name: NameFull: Hae Chang Gea IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 02 Text: Feb2009 Type: published Y: 2009 Identifiers: – Type: issn-print Value: 10871357 Numbering: – Type: volume Value: 131 – Type: issue Value: 1 Titles: – TitleFull: Journal of Manufacturing Science & Engineering Type: main |
| ResultId | 1 |
