Low loss, temperature stable dielectric ceramics in ZnNb2O6–Zn3Nb2O8 system for LTCC applications.
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| Title: | Low loss, temperature stable dielectric ceramics in ZnNb |
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| Authors: | Anjana, Prabhakaran Sreekumari1, Jawahar, Isuhak Naseema1, Sebastian, Mailadil Thomas1 mts@csrrltrd.ren.nic.in |
| Source: | Journal of Materials Science: Materials in Electronics. Jul2009, Vol. 20 Issue 7, p587-596. 10p. 3 Diagrams, 3 Charts, 11 Graphs. |
| Subjects: | Microelectronics research, Low temperature engineering, Dielectrics research, Zinc oxide, Dielectric resonators, Permittivity, Molecular integrated circuits |
| Abstract: | (1 − x)ZnNb2O6– xZn3Nb2O8 mixed phase ceramics have been prepared by conventional solid state ceramic route by both mixing ZnO with Nb2O5 and by ZnNb2O6 with Zn3Nb2O8, respectively. The sintered ceramics have high relative permittivity (ε r = 23–25), high quality factor ( Q u xf) up to 95,500 GHz and temperature coefficient of resonant frequency (τ f) in the range −55 to −73 ppm/°C. The quality factors are higher for the mixtures when prepared from ZnNb2O6 and Zn3Nb2O8. The 0.5ZnNb2O6–0.5Zn3Nb2O8 has Q u xf = 95,500 GHz (at 5.16 GHz), ε r = 22.7 and τ f = −65 ppm/°C when sintered at 1200 °C. The τ f of the ceramic has been tuned close to zero by the addition of ZnTa2O6, which has a positive τ f. The ceramic composition (1 − y)[0.5ZnNb2O6–0.5Zn3Nb2O8]– yZnTa2O6 with y = 0.91 shows ε r = 34.7 and Q u xf = 41,950 GHz (at 4.63 GHz) and zero τ f. In order to lower the sintering temperature of 0.5ZnNb2O6–0.5Zn3Nb2O8 ceramic for low temperature co-fired ceramic applications, low melting additives such as CuO, B2O3 and ACuB2O5 (A—Ba, Sr, Zn, Ca) have been added. 12 wt% ZnCuB2O5 added 0.5ZnNb2O6–0.5Zn3Nb2O8 ceramic sintered at 875 °C has Q u xf = 39,750 GHz (at 5.89 GHz), ε r = 18.3 and τ f = −88 ppm/°C. [ABSTRACT FROM AUTHOR] |
| Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
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| Items | – Name: Title Label: Title Group: Ti Data: Low loss, temperature stable dielectric ceramics in ZnNb<subscript>2</subscript>O<subscript>6</subscript>–Zn<subscript>3</subscript>Nb<subscript>2</subscript>O<subscript>8</subscript> system for LTCC applications. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Anjana%2C+Prabhakaran+Sreekumari%22">Anjana, Prabhakaran Sreekumari</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Jawahar%2C+Isuhak+Naseema%22">Jawahar, Isuhak Naseema</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Sebastian%2C+Mailadil+Thomas%22">Sebastian, Mailadil Thomas</searchLink><relatesTo>1</relatesTo><i> mts@csrrltrd.ren.nic.in</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>. Jul2009, Vol. 20 Issue 7, p587-596. 10p. 3 Diagrams, 3 Charts, 11 Graphs. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Microelectronics+research%22">Microelectronics research</searchLink><br /><searchLink fieldCode="DE" term="%22Low+temperature+engineering%22">Low temperature engineering</searchLink><br /><searchLink fieldCode="DE" term="%22Dielectrics+research%22">Dielectrics research</searchLink><br /><searchLink fieldCode="DE" term="%22Zinc+oxide%22">Zinc oxide</searchLink><br /><searchLink fieldCode="DE" term="%22Dielectric+resonators%22">Dielectric resonators</searchLink><br /><searchLink fieldCode="DE" term="%22Permittivity%22">Permittivity</searchLink><br /><searchLink fieldCode="DE" term="%22Molecular+integrated+circuits%22">Molecular integrated circuits</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: (1 − x)ZnNb2O6– xZn3Nb2O8 mixed phase ceramics have been prepared by conventional solid state ceramic route by both mixing ZnO with Nb2O5 and by ZnNb2O6 with Zn3Nb2O8, respectively. The sintered ceramics have high relative permittivity (ε r = 23–25), high quality factor ( Q u xf) up to 95,500 GHz and temperature coefficient of resonant frequency (τ f) in the range −55 to −73 ppm/°C. The quality factors are higher for the mixtures when prepared from ZnNb2O6 and Zn3Nb2O8. The 0.5ZnNb2O6–0.5Zn3Nb2O8 has Q u xf = 95,500 GHz (at 5.16 GHz), ε r = 22.7 and τ f = −65 ppm/°C when sintered at 1200 °C. The τ f of the ceramic has been tuned close to zero by the addition of ZnTa2O6, which has a positive τ f. The ceramic composition (1 − y)[0.5ZnNb2O6–0.5Zn3Nb2O8]– yZnTa2O6 with y = 0.91 shows ε r = 34.7 and Q u xf = 41,950 GHz (at 4.63 GHz) and zero τ f. In order to lower the sintering temperature of 0.5ZnNb2O6–0.5Zn3Nb2O8 ceramic for low temperature co-fired ceramic applications, low melting additives such as CuO, B2O3 and ACuB2O5 (A—Ba, Sr, Zn, Ca) have been added. 12 wt% ZnCuB2O5 added 0.5ZnNb2O6–0.5Zn3Nb2O8 ceramic sintered at 875 °C has Q u xf = 39,750 GHz (at 5.89 GHz), ε r = 18.3 and τ f = −88 ppm/°C. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1007/s10854-008-9770-6 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 10 StartPage: 587 Subjects: – SubjectFull: Microelectronics research Type: general – SubjectFull: Low temperature engineering Type: general – SubjectFull: Dielectrics research Type: general – SubjectFull: Zinc oxide Type: general – SubjectFull: Dielectric resonators Type: general – SubjectFull: Permittivity Type: general – SubjectFull: Molecular integrated circuits Type: general Titles: – TitleFull: Low loss, temperature stable dielectric ceramics in ZnNb2O6–Zn3Nb2O8 system for LTCC applications. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Anjana, Prabhakaran Sreekumari – PersonEntity: Name: NameFull: Jawahar, Isuhak Naseema – PersonEntity: Name: NameFull: Sebastian, Mailadil Thomas IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 07 Text: Jul2009 Type: published Y: 2009 Identifiers: – Type: issn-print Value: 09574522 Numbering: – Type: volume Value: 20 – Type: issue Value: 7 Titles: – TitleFull: Journal of Materials Science: Materials in Electronics Type: main |
| ResultId | 1 |
