High-Resolution Refractive Index and Micro-Raman Spectroscopy of Planar Waveguides in KGd(WO4)2 Formed by Swift Heavy Ion Irradiation.
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| Title: | High-Resolution Refractive Index and Micro-Raman Spectroscopy of Planar Waveguides in KGd(WO |
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| Authors: | Merchant, C. A.1,2 clark.merchant@utoronto.ca, Scrutton, P.1 pscrutton@yahoo.com, García-Blanco, S.1,3 Sonia.Garcia.Blanco@ino.ca, Hnatovsky, C.4,5 Khnatovsky@ozoptics.com, Taylor, R. S.4 Rod.Taylor@nrc-cnrc.gc.ca, García-Navarro, A.6 agar@uam.es, García, G.7, Agulló-Lopez, F.6 fal@uam.es, Olivares, J.8 jose.olivares@uam.es, Helmy, A. S.1 a.helmy@utoronto.ca, Aitchison, J. S.1 stewart.aitchison@utoronto.ca |
| Source: | IEEE Journal of Quantum Electronics. Mar/Apr2009, Vol. 45 Issue 3/4, p373-379. 7p. 5 Graphs. |
| Subjects: | Crystals, Waveguides, Potassium compounds, Irradiation, Raman spectroscopy, Refractive index, Heavy ions |
| Abstract: | We report on the characterization of planar waveguides formed in the Raman-active crystal KGd(WO4 )2 using swift carbon, fluorine, and oxygen ion irradiation. The characterization of the waveguiding regions was performed using high-resolution niicroreflectivity and micro-Raman spectroscopy. The high-resolution microreflectivity measurement fully characterizes the refractive index profile of the barrier formed by amorphization of the crystal and detects other index variations not detected by the m-line technique. Raman spectroscopy measurements reveal details of the Raman properties of the crystal in the waveguiding region in relation to the rest of the sample for the different ion irradiations. Both of these measurement techniques are shown to be important for use of KGd(WO4)2 in integrated Raman-active devices. [ABSTRACT FROM AUTHOR] |
| Copyright of IEEE Journal of Quantum Electronics is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 37827899 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: High-Resolution Refractive Index and Micro-Raman Spectroscopy of Planar Waveguides in KGd(WO<subscript>4</subscript>)<subscript>2</subscript> Formed by Swift Heavy Ion Irradiation. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Merchant%2C+C%2E+A%2E%22">Merchant, C. A.</searchLink><relatesTo>1,2</relatesTo><i> clark.merchant@utoronto.ca</i><br /><searchLink fieldCode="AR" term="%22Scrutton%2C+P%2E%22">Scrutton, P.</searchLink><relatesTo>1</relatesTo><i> pscrutton@yahoo.com</i><br /><searchLink fieldCode="AR" term="%22García-Blanco%2C+S%2E%22">García-Blanco, S.</searchLink><relatesTo>1,3</relatesTo><i> Sonia.Garcia.Blanco@ino.ca</i><br /><searchLink fieldCode="AR" term="%22Hnatovsky%2C+C%2E%22">Hnatovsky, C.</searchLink><relatesTo>4,5</relatesTo><i> Khnatovsky@ozoptics.com</i><br /><searchLink fieldCode="AR" term="%22Taylor%2C+R%2E+S%2E%22">Taylor, R. S.</searchLink><relatesTo>4</relatesTo><i> Rod.Taylor@nrc-cnrc.gc.ca</i><br /><searchLink fieldCode="AR" term="%22García-Navarro%2C+A%2E%22">García-Navarro, A.</searchLink><relatesTo>6</relatesTo><i> agar@uam.es</i><br /><searchLink fieldCode="AR" term="%22García%2C+G%2E%22">García, G.</searchLink><relatesTo>7</relatesTo><br /><searchLink fieldCode="AR" term="%22Agulló-Lopez%2C+F%2E%22">Agulló-Lopez, F.</searchLink><relatesTo>6</relatesTo><i> fal@uam.es</i><br /><searchLink fieldCode="AR" term="%22Olivares%2C+J%2E%22">Olivares, J.</searchLink><relatesTo>8</relatesTo><i> jose.olivares@uam.es</i><br /><searchLink fieldCode="AR" term="%22Helmy%2C+A%2E+S%2E%22">Helmy, A. S.</searchLink><relatesTo>1</relatesTo><i> a.helmy@utoronto.ca</i><br /><searchLink fieldCode="AR" term="%22Aitchison%2C+J%2E+S%2E%22">Aitchison, J. S.</searchLink><relatesTo>1</relatesTo><i> stewart.aitchison@utoronto.ca</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22IEEE+Journal+of+Quantum+Electronics%22">IEEE Journal of Quantum Electronics</searchLink>. Mar/Apr2009, Vol. 45 Issue 3/4, p373-379. 7p. 5 Graphs. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Crystals%22">Crystals</searchLink><br /><searchLink fieldCode="DE" term="%22Waveguides%22">Waveguides</searchLink><br /><searchLink fieldCode="DE" term="%22Potassium+compounds%22">Potassium compounds</searchLink><br /><searchLink fieldCode="DE" term="%22Irradiation%22">Irradiation</searchLink><br /><searchLink fieldCode="DE" term="%22Raman+spectroscopy%22">Raman spectroscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Refractive+index%22">Refractive index</searchLink><br /><searchLink fieldCode="DE" term="%22Heavy+ions%22">Heavy ions</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: We report on the characterization of planar waveguides formed in the Raman-active crystal KGd(WO4 )2 using swift carbon, fluorine, and oxygen ion irradiation. The characterization of the waveguiding regions was performed using high-resolution niicroreflectivity and micro-Raman spectroscopy. The high-resolution microreflectivity measurement fully characterizes the refractive index profile of the barrier formed by amorphization of the crystal and detects other index variations not detected by the m-line technique. Raman spectroscopy measurements reveal details of the Raman properties of the crystal in the waveguiding region in relation to the rest of the sample for the different ion irradiations. Both of these measurement techniques are shown to be important for use of KGd(WO4)2 in integrated Raman-active devices. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of IEEE Journal of Quantum Electronics is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1109/JQE.2009.2013216 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 7 StartPage: 373 Subjects: – SubjectFull: Crystals Type: general – SubjectFull: Waveguides Type: general – SubjectFull: Potassium compounds Type: general – SubjectFull: Irradiation Type: general – SubjectFull: Raman spectroscopy Type: general – SubjectFull: Refractive index Type: general – SubjectFull: Heavy ions Type: general Titles: – TitleFull: High-Resolution Refractive Index and Micro-Raman Spectroscopy of Planar Waveguides in KGd(WO4)2 Formed by Swift Heavy Ion Irradiation. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Merchant, C. A. – PersonEntity: Name: NameFull: Scrutton, P. – PersonEntity: Name: NameFull: García-Blanco, S. – PersonEntity: Name: NameFull: Hnatovsky, C. – PersonEntity: Name: NameFull: Taylor, R. S. – PersonEntity: Name: NameFull: García-Navarro, A. – PersonEntity: Name: NameFull: García, G. – PersonEntity: Name: NameFull: Agulló-Lopez, F. – PersonEntity: Name: NameFull: Olivares, J. – PersonEntity: Name: NameFull: Helmy, A. S. – PersonEntity: Name: NameFull: Aitchison, J. S. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 03 Text: Mar/Apr2009 Type: published Y: 2009 Identifiers: – Type: issn-print Value: 00189197 Numbering: – Type: volume Value: 45 – Type: issue Value: 3/4 Titles: – TitleFull: IEEE Journal of Quantum Electronics Type: main |
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