APA (7th ed.) Citation

Johansson, T., Soderstrom, J., Eastman, L. F., & Woodard, D. W. (2000). A study of L-band GaAlAs/GaAs HBTs for high-voltage RF-power. International Journal of Electronics, 87(4), 497. https://doi.org/10.1080/002072100132147

Chicago Style (17th ed.) Citation

Johansson, T., J. Soderstrom, L. F. Eastman, and D. W. Woodard. "A Study of L-band GaAlAs/GaAs HBTs for High-voltage RF-power." International Journal of Electronics 87, no. 4 (2000): 497. https://doi.org/10.1080/002072100132147.

MLA (9th ed.) Citation

Johansson, T., et al. "A Study of L-band GaAlAs/GaAs HBTs for High-voltage RF-power." International Journal of Electronics, vol. 87, no. 4, 2000, p. 497, https://doi.org/10.1080/002072100132147.