A study of L-band GaAlAs/GaAs HBTs for high-voltage RF-power.
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| Title: | A study of L-band GaAlAs/GaAs HBTs for high-voltage RF-power. |
|---|---|
| Authors: | Johansson, T., Soderstrom, J., Eastman, L. F., Woodard, D. W. |
| Source: | International Journal of Electronics. Apr2000, Vol. 87 Issue 4, p497-510. 14p. |
| Subjects: | Bipolar transistors, Cellular mappings (Mathematics) |
| Abstract: | The feasibility of GaAlAs/GaAs heterojunction bipolar transistors as power output transistors for 24-28 V cellular base station applications was studied. A 1 W, 25 V test vehicle was fabricated, with predictable and uniform electrical parameters. Maximum output power was 1.02 W with 9.1 dB gain at 2GHz and 18 V supply voltage. Characterization at more than 22 V destroyed all devices, even if emitter ballasting resistors were used for thermal balance. Analysis indicated that the failures were caused by too wide emitters in combination with the high supply voltage, causing current crowding and large temperature spikes. Small (< 2-3 mum) horizontal emitter dimensions are required even with low base sheet resistivity, otherwise leading to destructive temperature non-uniformities, unless special arrangements to drastically reduce the thermal resistance can be applied. [ABSTRACT FROM AUTHOR] |
| Copyright of International Journal of Electronics is the property of Taylor & Francis Ltd and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 3815251 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: A study of L-band GaAlAs/GaAs HBTs for high-voltage RF-power. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Johansson%2C+T%2E%22">Johansson, T.</searchLink><br /><searchLink fieldCode="AR" term="%22Soderstrom%2C+J%2E%22">Soderstrom, J.</searchLink><br /><searchLink fieldCode="AR" term="%22Eastman%2C+L%2E+F%2E%22">Eastman, L. F.</searchLink><br /><searchLink fieldCode="AR" term="%22Woodard%2C+D%2E+W%2E%22">Woodard, D. W.</searchLink> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22International+Journal+of+Electronics%22">International Journal of Electronics</searchLink>. Apr2000, Vol. 87 Issue 4, p497-510. 14p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Bipolar+transistors%22">Bipolar transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Cellular+mappings+%28Mathematics%29%22">Cellular mappings (Mathematics)</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: The feasibility of GaAlAs/GaAs heterojunction bipolar transistors as power output transistors for 24-28 V cellular base station applications was studied. A 1 W, 25 V test vehicle was fabricated, with predictable and uniform electrical parameters. Maximum output power was 1.02 W with 9.1 dB gain at 2GHz and 18 V supply voltage. Characterization at more than 22 V destroyed all devices, even if emitter ballasting resistors were used for thermal balance. Analysis indicated that the failures were caused by too wide emitters in combination with the high supply voltage, causing current crowding and large temperature spikes. Small (< 2-3 mum) horizontal emitter dimensions are required even with low base sheet resistivity, otherwise leading to destructive temperature non-uniformities, unless special arrangements to drastically reduce the thermal resistance can be applied. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of International Journal of Electronics is the property of Taylor & Francis Ltd and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1080/002072100132147 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 14 StartPage: 497 Subjects: – SubjectFull: Bipolar transistors Type: general – SubjectFull: Cellular mappings (Mathematics) Type: general Titles: – TitleFull: A study of L-band GaAlAs/GaAs HBTs for high-voltage RF-power. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Johansson, T. – PersonEntity: Name: NameFull: Soderstrom, J. – PersonEntity: Name: NameFull: Eastman, L. F. – PersonEntity: Name: NameFull: Woodard, D. W. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 04 Text: Apr2000 Type: published Y: 2000 Identifiers: – Type: issn-print Value: 00207217 Numbering: – Type: volume Value: 87 – Type: issue Value: 4 Titles: – TitleFull: International Journal of Electronics Type: main |
| ResultId | 1 |
