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The geometrical dependence of radiation hardness in planar and 3D silicon detectors

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Title: The geometrical dependence of radiation hardness in planar and 3D silicon detectors
Authors: DaVia, C. Cinzia.Da.Via@cern.ch, Watts, S.J.1
Source: Nuclear Instruments & Methods in Physics Research Section A. May2009, Vol. 603 Issue 3, p319-324. 6p.
Subjects: Geometric analysis, Radiation hardening (Electronics), Silicon diodes, Surface coatings, Irradiation, Electrodes
Abstract: Abstract: The radiation hardness of planar and 3D silicon detectors fabricated on Float-Zone and epitaxial silicon substrates is compared after exposure to neutron equivalent fluences greater than 1015 cm−2. Following irradiation, the Signal Efficiency (SE), expressed as the ratio of the maximum signal after irradiation divided to the maximum signal before irradiation, is shown to depend only on the geometrical distance, L, between the p+ and n+ electrodes. The Signal Efficiency is independent of the silicon substrate used for the various detectors. A formalism describing the dependence of Signal Efficiency on L is derived and used to fit the data. The Signal Efficiency dependence on inter-electrode distance L and the fluence φ follow the same inverse proportionality law. [Copyright &y& Elsevier]
Copyright of Nuclear Instruments & Methods in Physics Research Section A is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 39454575
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: The geometrical dependence of radiation hardness in planar and 3D silicon detectors
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  Data: <searchLink fieldCode="AR" term="%22DaVia%2C+C%2E%22">DaVia, C.</searchLink><i> Cinzia.Da.Via@cern.ch</i><br /><searchLink fieldCode="AR" term="%22Watts%2C+S%2EJ%2E%22">Watts, S.J.</searchLink><relatesTo>1</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Nuclear+Instruments+%26+Methods+in+Physics+Research+Section+A%22">Nuclear Instruments & Methods in Physics Research Section A</searchLink>. May2009, Vol. 603 Issue 3, p319-324. 6p.
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  Data: <searchLink fieldCode="DE" term="%22Geometric+analysis%22">Geometric analysis</searchLink><br /><searchLink fieldCode="DE" term="%22Radiation+hardening+%28Electronics%29%22">Radiation hardening (Electronics)</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon+diodes%22">Silicon diodes</searchLink><br /><searchLink fieldCode="DE" term="%22Surface+coatings%22">Surface coatings</searchLink><br /><searchLink fieldCode="DE" term="%22Irradiation%22">Irradiation</searchLink><br /><searchLink fieldCode="DE" term="%22Electrodes%22">Electrodes</searchLink>
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  Data: Abstract: The radiation hardness of planar and 3D silicon detectors fabricated on Float-Zone and epitaxial silicon substrates is compared after exposure to neutron equivalent fluences greater than 1015 cm−2. Following irradiation, the Signal Efficiency (SE), expressed as the ratio of the maximum signal after irradiation divided to the maximum signal before irradiation, is shown to depend only on the geometrical distance, L, between the p+ and n+ electrodes. The Signal Efficiency is independent of the silicon substrate used for the various detectors. A formalism describing the dependence of Signal Efficiency on L is derived and used to fit the data. The Signal Efficiency dependence on inter-electrode distance L and the fluence φ follow the same inverse proportionality law. [Copyright &y& Elsevier]
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  Data: <i>Copyright of Nuclear Instruments & Methods in Physics Research Section A is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1016/j.nima.2009.02.030
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      – Code: eng
        Text: English
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        PageCount: 6
        StartPage: 319
    Subjects:
      – SubjectFull: Geometric analysis
        Type: general
      – SubjectFull: Radiation hardening (Electronics)
        Type: general
      – SubjectFull: Silicon diodes
        Type: general
      – SubjectFull: Surface coatings
        Type: general
      – SubjectFull: Irradiation
        Type: general
      – SubjectFull: Electrodes
        Type: general
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      – TitleFull: The geometrical dependence of radiation hardness in planar and 3D silicon detectors
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              Text: May2009
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