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Plasma-enhanced low temperature growth of silicon nanowires and hierarchical structures by using tin and indium catalysts.

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Title: Plasma-enhanced low temperature growth of silicon nanowires and hierarchical structures by using tin and indium catalysts.
Authors: Linwei Yu, Benedict O, Jean Alet, S Conesa, F Peiro, J Arbiol, Pere Roca, i Cabarrocas
Source: Nanotechnology. Jun2009, Vol. 20 Issue 22, p225604-225604. 1p.
Subjects: Nanowires, Plasma gases, Low temperatures, Silicon compounds, Tin compounds, Indium compounds, Metal catalysts, Nucleation
Abstract: Plasma-enhanced low temperature growth (<300 degC) of silicon nanowires (SiNWs) and hierarchical structures via a vapor-liquid-solid (VLS) mechanism are investigated. The SiNWs were grown using tin and indium as catalysts prepared by in situ H2 plasma reduction of SnO2 and ITO substrates, respectively. Effective growth of SiNWs at temperatures as low as 240 degC have been achieved, while tin is found to be more ideal than indium in achieving a better size and density control of the SiNWs. Ultra-thin (4-8 nm) silica nanowires, sprouting from the dendritic nucleation patterns on the catalyst's surface, were also observed to form during the cooling process. A kinetic growth model has been proposed to account for their formation mechanism. This hierarchical structure combines the advantages of the size and position controllability from the catalyst-on-top VLS-SiNWs and the ultra-thin size from the catalyst-on-bottom VLS-ScNWs. [ABSTRACT FROM AUTHOR]
Copyright of Nanotechnology is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Plasma-enhanced low temperature growth of silicon nanowires and hierarchical structures by using tin and indium catalysts.
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  Data: Plasma-enhanced low temperature growth (&lt;300 degC) of silicon nanowires (SiNWs) and hierarchical structures via a vapor-liquid-solid (VLS) mechanism are investigated. The SiNWs were grown using tin and indium as catalysts prepared by in situ H2 plasma reduction of SnO2 and ITO substrates, respectively. Effective growth of SiNWs at temperatures as low as 240 degC have been achieved, while tin is found to be more ideal than indium in achieving a better size and density control of the SiNWs. Ultra-thin (4-8 nm) silica nanowires, sprouting from the dendritic nucleation patterns on the catalyst&#39;s surface, were also observed to form during the cooling process. A kinetic growth model has been proposed to account for their formation mechanism. This hierarchical structure combines the advantages of the size and position controllability from the catalyst-on-top VLS-SiNWs and the ultra-thin size from the catalyst-on-bottom VLS-ScNWs. [ABSTRACT FROM AUTHOR]
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  Data: &lt;i&gt;Copyright of Nanotechnology is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder&#39;s express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.&lt;/i&gt; (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1088/0957-4484/20/22/225604
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      – Code: eng
        Text: English
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        PageCount: 1
        StartPage: 225604
    Subjects:
      – SubjectFull: Nanowires
        Type: general
      – SubjectFull: Plasma gases
        Type: general
      – SubjectFull: Low temperatures
        Type: general
      – SubjectFull: Silicon compounds
        Type: general
      – SubjectFull: Tin compounds
        Type: general
      – SubjectFull: Indium compounds
        Type: general
      – SubjectFull: Metal catalysts
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      – SubjectFull: Nucleation
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      – TitleFull: Plasma-enhanced low temperature growth of silicon nanowires and hierarchical structures by using tin and indium catalysts.
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            NameFull: Linwei Yu
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              M: 06
              Text: Jun2009
              Type: published
              Y: 2009
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