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Charge retention improvement of charge-trapping type flash device by plasma immersion ion implantation

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Title: Charge retention improvement of charge-trapping type flash device by plasma immersion ion implantation
Authors: Liu, Li-Jung1, Chang-Liao, Kuei-Shu1 Lkschang@ess.nthu.edu.tw, Wu, Tai-Yu1, Wang, Tien-Ko1, Tsai, Wen-Fa2, Ai, Chi-Fong2
Source: Microelectronic Engineering. Jul2009, Vol. 86 Issue 7-9, p1852-1855. 4p.
Subjects: Flash memory, Electric charge, Surface analysis, Ion implantation, Plasma gases, Computer programming, Dielectric devices, Silicon nitride
Abstract: Abstract: Electrical characteristics of charge trapping-type flash devices with HfAlO charge trapping layer nitrided by plasma immersion ion implantation (PIII) technique with different implantation energies and time are studied. Utilizing Fowler–Nordheim (FN) operation, the programming speed of flash memory with charge trapping layer nitrided at low implantation energy is faster than that of control sample. The erasing speed of PIII-treated sample is slightly slower than that of control one, which might be due to the formation of silicon nitride in the tunneling oxide. The retention characteristics of all PIII-treated samples are significantly improved. Different peak locations of implanted nitrogen concentrations are formed by different implantation energies, which cause various electrical characteristics of flash devices. [Copyright &y& Elsevier]
Copyright of Microelectronic Engineering is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 40631501
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Label: Title
  Group: Ti
  Data: Charge retention improvement of charge-trapping type flash device by plasma immersion ion implantation
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  Data: <searchLink fieldCode="AR" term="%22Liu%2C+Li-Jung%22">Liu, Li-Jung</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Chang-Liao%2C+Kuei-Shu%22">Chang-Liao, Kuei-Shu</searchLink><relatesTo>1</relatesTo><i> Lkschang@ess.nthu.edu.tw</i><br /><searchLink fieldCode="AR" term="%22Wu%2C+Tai-Yu%22">Wu, Tai-Yu</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Wang%2C+Tien-Ko%22">Wang, Tien-Ko</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Tsai%2C+Wen-Fa%22">Tsai, Wen-Fa</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Ai%2C+Chi-Fong%22">Ai, Chi-Fong</searchLink><relatesTo>2</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Microelectronic+Engineering%22">Microelectronic Engineering</searchLink>. Jul2009, Vol. 86 Issue 7-9, p1852-1855. 4p.
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  Data: <searchLink fieldCode="DE" term="%22Flash+memory%22">Flash memory</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+charge%22">Electric charge</searchLink><br /><searchLink fieldCode="DE" term="%22Surface+analysis%22">Surface analysis</searchLink><br /><searchLink fieldCode="DE" term="%22Ion+implantation%22">Ion implantation</searchLink><br /><searchLink fieldCode="DE" term="%22Plasma+gases%22">Plasma gases</searchLink><br /><searchLink fieldCode="DE" term="%22Computer+programming%22">Computer programming</searchLink><br /><searchLink fieldCode="DE" term="%22Dielectric+devices%22">Dielectric devices</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon+nitride%22">Silicon nitride</searchLink>
– Name: Abstract
  Label: Abstract
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  Data: Abstract: Electrical characteristics of charge trapping-type flash devices with HfAlO charge trapping layer nitrided by plasma immersion ion implantation (PIII) technique with different implantation energies and time are studied. Utilizing Fowler–Nordheim (FN) operation, the programming speed of flash memory with charge trapping layer nitrided at low implantation energy is faster than that of control sample. The erasing speed of PIII-treated sample is slightly slower than that of control one, which might be due to the formation of silicon nitride in the tunneling oxide. The retention characteristics of all PIII-treated samples are significantly improved. Different peak locations of implanted nitrogen concentrations are formed by different implantation energies, which cause various electrical characteristics of flash devices. [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Microelectronic Engineering is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1016/j.mee.2009.03.071
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      – Code: eng
        Text: English
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      Pagination:
        PageCount: 4
        StartPage: 1852
    Subjects:
      – SubjectFull: Flash memory
        Type: general
      – SubjectFull: Electric charge
        Type: general
      – SubjectFull: Surface analysis
        Type: general
      – SubjectFull: Ion implantation
        Type: general
      – SubjectFull: Plasma gases
        Type: general
      – SubjectFull: Computer programming
        Type: general
      – SubjectFull: Dielectric devices
        Type: general
      – SubjectFull: Silicon nitride
        Type: general
    Titles:
      – TitleFull: Charge retention improvement of charge-trapping type flash device by plasma immersion ion implantation
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            NameFull: Liu, Li-Jung
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            NameFull: Chang-Liao, Kuei-Shu
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            NameFull: Wu, Tai-Yu
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            NameFull: Wang, Tien-Ko
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            NameFull: Tsai, Wen-Fa
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            – D: 01
              M: 07
              Text: Jul2009
              Type: published
              Y: 2009
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