APA (7th ed.) Citation

Beyer, R., von Borany, J., & Burghardt, H. (2009). Interface and border trap relaxation in Si–SiO2 structures with Ge nanocrystals examined by transient capacitance spectroscopy. Microelectronic Engineering, 86(7-9), 1859. https://doi.org/10.1016/j.mee.2009.03.128

Chicago Style (17th ed.) Citation

Beyer, R., J. von Borany, and H. Burghardt. "Interface and Border Trap Relaxation in Si–SiO2 Structures with Ge Nanocrystals Examined by Transient Capacitance Spectroscopy." Microelectronic Engineering 86, no. 7-9 (2009): 1859. https://doi.org/10.1016/j.mee.2009.03.128.

MLA (9th ed.) Citation

Beyer, R., et al. "Interface and Border Trap Relaxation in Si–SiO2 Structures with Ge Nanocrystals Examined by Transient Capacitance Spectroscopy." Microelectronic Engineering, vol. 86, no. 7-9, 2009, p. 1859, https://doi.org/10.1016/j.mee.2009.03.128.