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Interface and border trap relaxation in Si–SiO2 structures with Ge nanocrystals examined by transient capacitance spectroscopy

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Title: Interface and border trap relaxation in Si–SiO2 structures with Ge nanocrystals examined by transient capacitance spectroscopy
Authors: Beyer, R.1 reinhard.beyer@email.de, von Borany, J.2, Burghardt, H.1
Source: Microelectronic Engineering. Jul2009, Vol. 86 Issue 7-9, p1859-1862. 4p.
Subjects: Metal oxide semiconductors, Semiconductor junctions, Relaxation phenomena, Silicon oxide, Germanium crystals, Deep level transient spectroscopy, Ion implantation, Heat treatment of semiconductors
Abstract: Abstract: The formation of interface and border states in metal–oxide–semiconductor structures associated with the generation of embedded germanium nanocrystals in 20nm SiO2-layers by means of ion implantation and a subsequent annealing was examined. Deep level transient spectroscopy and related time-domain techniques were applied in order to study the charge trapping and emission at the Si–SiO2 interface. A significant dependence of the interface state density D it on the conditions of the cluster generation was found. Any Ge-implanted sample features a pronounced level at about 0.31eV above the valence band edge and a concentration above 1013 cm−2 eV−1, likely related to a Pb-center. A systematic variation of the filling pulse parameters was utilized in order to separate the response of fast and slow states, and to substantiate the existence of border traps located in the vicinity of the Si–SiO2 interface. The role of interface and border traps for the relaxation of the trapped charge in the nanocrystals is illustrated. [Copyright &y& Elsevier]
Copyright of Microelectronic Engineering is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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DbLabel: Engineering Source
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  Label: Title
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  Data: Interface and border trap relaxation in Si–SiO<subscript>2</subscript> structures with Ge nanocrystals examined by transient capacitance spectroscopy
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  Data: <searchLink fieldCode="AR" term="%22Beyer%2C+R%2E%22">Beyer, R.</searchLink><relatesTo>1</relatesTo><i> reinhard.beyer@email.de</i><br /><searchLink fieldCode="AR" term="%22von+Borany%2C+J%2E%22">von Borany, J.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Burghardt%2C+H%2E%22">Burghardt, H.</searchLink><relatesTo>1</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Microelectronic+Engineering%22">Microelectronic Engineering</searchLink>. Jul2009, Vol. 86 Issue 7-9, p1859-1862. 4p.
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  Data: <searchLink fieldCode="DE" term="%22Metal+oxide+semiconductors%22">Metal oxide semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+junctions%22">Semiconductor junctions</searchLink><br /><searchLink fieldCode="DE" term="%22Relaxation+phenomena%22">Relaxation phenomena</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon+oxide%22">Silicon oxide</searchLink><br /><searchLink fieldCode="DE" term="%22Germanium+crystals%22">Germanium crystals</searchLink><br /><searchLink fieldCode="DE" term="%22Deep+level+transient+spectroscopy%22">Deep level transient spectroscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Ion+implantation%22">Ion implantation</searchLink><br /><searchLink fieldCode="DE" term="%22Heat+treatment+of+semiconductors%22">Heat treatment of semiconductors</searchLink>
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  Data: Abstract: The formation of interface and border states in metal–oxide–semiconductor structures associated with the generation of embedded germanium nanocrystals in 20nm SiO2-layers by means of ion implantation and a subsequent annealing was examined. Deep level transient spectroscopy and related time-domain techniques were applied in order to study the charge trapping and emission at the Si–SiO2 interface. A significant dependence of the interface state density D it on the conditions of the cluster generation was found. Any Ge-implanted sample features a pronounced level at about 0.31eV above the valence band edge and a concentration above 1013 cm−2 eV−1, likely related to a Pb-center. A systematic variation of the filling pulse parameters was utilized in order to separate the response of fast and slow states, and to substantiate the existence of border traps located in the vicinity of the Si–SiO2 interface. The role of interface and border traps for the relaxation of the trapped charge in the nanocrystals is illustrated. [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
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  Data: <i>Copyright of Microelectronic Engineering is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – Type: doi
        Value: 10.1016/j.mee.2009.03.128
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      – Code: eng
        Text: English
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        PageCount: 4
        StartPage: 1859
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        Type: general
      – SubjectFull: Semiconductor junctions
        Type: general
      – SubjectFull: Relaxation phenomena
        Type: general
      – SubjectFull: Silicon oxide
        Type: general
      – SubjectFull: Germanium crystals
        Type: general
      – SubjectFull: Deep level transient spectroscopy
        Type: general
      – SubjectFull: Ion implantation
        Type: general
      – SubjectFull: Heat treatment of semiconductors
        Type: general
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      – TitleFull: Interface and border trap relaxation in Si–SiO2 structures with Ge nanocrystals examined by transient capacitance spectroscopy
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            NameFull: von Borany, J.
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            NameFull: Burghardt, H.
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              Text: Jul2009
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              Y: 2009
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