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Parasitic Interlayer at the GaAs-on-InGaP Interface in MOVPE InGaP/GaAs: A Study by the Chemically Sensitive (200) Diffraction.

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Title: Parasitic Interlayer at the GaAs-on-InGaP Interface in MOVPE InGaP/GaAs: A Study by the Chemically Sensitive (200) Diffraction.
Authors: Frigeri, C.1 frigeri@imem.cnr.it, Attolini, G.1, Bosi, M.1, Pelosi, C.1, Germini, F.1
Source: Journal of The Electrochemical Society. 2009, Vol. 156 Issue 6, pH448-H452. 6p.
Subjects: X-ray diffraction, Transmission electron microscopy, Metal organic chemical vapor deposition, Heterostructures, Interfaces (Physical sciences), Gallium arsenide, Epitaxy, Indium
Abstract: The chemically sensitive (200) diffraction in the dark field (DF) mode of transmission electron microscopy has been used to detect, identify, and evaluate the composition of the parasitic interlayer at the GaAs-on-InGaP interface in metallorganic vaporphase epitaxy (MOVPE) In[subx]Ga[sub1-x]P/GaAs heterostructures. The latter were grown at 600°C with no growth interruption. The composition range determined by (200) DF was. further refined by using the X-ray diffraction result that the interlayer has a negative lattice mismatch to GaAs. The parasitic interlayer can be either GaAs[sub0.45]P[sub0.55] or In[subx]Ga[sub1-x]As[sub1-y]P[suby] with 0 ⩽ x < 0.069 and 0.55 ⩽ y < 0.707. P/As intermixing and In segregation are assumed to drive the formation of the interlayer. The low In content in the quaternary is ascribed to the reduced In segregation at 600°C. In segregation is likely favored by the tensile strain associated with the interlayer in its process of growth. [ABSTRACT FROM AUTHOR]
Copyright of Journal of The Electrochemical Society is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Parasitic Interlayer at the GaAs-on-InGaP Interface in MOVPE InGaP/GaAs: A Study by the Chemically Sensitive (200) Diffraction.
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  Data: &lt;searchLink fieldCode=&quot;JN&quot; term=&quot;%22Journal+of+The+Electrochemical+Society%22&quot;&gt;Journal of The Electrochemical Society&lt;/searchLink&gt;. 2009, Vol. 156 Issue 6, pH448-H452. 6p.
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  Data: The chemically sensitive (200) diffraction in the dark field (DF) mode of transmission electron microscopy has been used to detect, identify, and evaluate the composition of the parasitic interlayer at the GaAs-on-InGaP interface in metallorganic vaporphase epitaxy (MOVPE) In[subx]Ga[sub1-x]P/GaAs heterostructures. The latter were grown at 600&#176;C with no growth interruption. The composition range determined by (200) DF was. further refined by using the X-ray diffraction result that the interlayer has a negative lattice mismatch to GaAs. The parasitic interlayer can be either GaAs[sub0.45]P[sub0.55] or In[subx]Ga[sub1-x]As[sub1-y]P[suby] with 0 ⩽ x &lt; 0.069 and 0.55 ⩽ y &lt; 0.707. P/As intermixing and In segregation are assumed to drive the formation of the interlayer. The low In content in the quaternary is ascribed to the reduced In segregation at 600&#176;C. In segregation is likely favored by the tensile strain associated with the interlayer in its process of growth. [ABSTRACT FROM AUTHOR]
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  Data: &lt;i&gt;Copyright of Journal of The Electrochemical Society is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder&#39;s express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.&lt;/i&gt; (Copyright applies to all Abstracts.)
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        Value: 10.1149/1.3111028
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      – Code: eng
        Text: English
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        PageCount: 6
        StartPage: H448
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      – SubjectFull: X-ray diffraction
        Type: general
      – SubjectFull: Transmission electron microscopy
        Type: general
      – SubjectFull: Metal organic chemical vapor deposition
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      – SubjectFull: Heterostructures
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      – SubjectFull: Interfaces (Physical sciences)
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      – SubjectFull: Gallium arsenide
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      – SubjectFull: Epitaxy
        Type: general
      – SubjectFull: Indium
        Type: general
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      – TitleFull: Parasitic Interlayer at the GaAs-on-InGaP Interface in MOVPE InGaP/GaAs: A Study by the Chemically Sensitive (200) Diffraction.
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              Text: 2009
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