Fabrication of microstructures in III–V semiconductors by proton beam writing
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| Title: | Fabrication of microstructures in III–V semiconductors by proton beam writing |
|---|---|
| Authors: | Menzel, F. fmenzel@physik.uni-leipzig.de, Spemann, D.1, Lenzner, J.1, Böhlmann, W.1, Zimmermann, G.1, Butz, T.1 |
| Source: | Nuclear Instruments & Methods in Physics Research Section B. Jun2009, Vol. 267 Issue 12/13, p2321-2326. 6p. |
| Subjects: | Microfabrication, Semiconductor etching, Microstructure, Lithography, Proton beams, Gallium arsenide, Helium ions |
| Abstract: | Abstract: While the creation of microstructures in Si and GaAs by irradiation with high energy protons and helium ions and subsequent electrochemical etching has already been reported, the creation of microstructures in InP using this technique is investigated here for the first time. It is demonstrated that proton irradiation of Fe-doped semi-insulating InP(001) leads to an amplified material removal in the irradiated areas during electrochemical etching in an HF solution. By this way microstructures were produced using a 2.25MeV proton beam focused down to ∼1μm. The depth of the etched structures depends on the etching procedure. In addition, amplified etching of non-irradiated material encircled by closed irradiated patterns was observed. Furthermore, irradiation with helium ions leads to the formation of thin freestanding InP layers by simultaneous underetching as well as etching from the sample surface of the irradiated regions. In contrast to the semi-insulating material, the irradiation and electrochemical etching of n-type InP results in an amplified formation of porous material which partly leads to a complete removal of the material in the irradiated areas. A comparison between GaAs and InP concerning the dissolution characteristics shows mainly a similar behavior of the semi-insulating types of these semiconductors and of the n-type materials. [Copyright &y& Elsevier] |
| Copyright of Nuclear Instruments & Methods in Physics Research Section B is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 41582293 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Fabrication of microstructures in III–V semiconductors by proton beam writing – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Menzel%2C+F%2E%22">Menzel, F.</searchLink><i> fmenzel@physik.uni-leipzig.de</i><br /><searchLink fieldCode="AR" term="%22Spemann%2C+D%2E%22">Spemann, D.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Lenzner%2C+J%2E%22">Lenzner, J.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Böhlmann%2C+W%2E%22">Böhlmann, W.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Zimmermann%2C+G%2E%22">Zimmermann, G.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Butz%2C+T%2E%22">Butz, T.</searchLink><relatesTo>1</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Nuclear+Instruments+%26+Methods+in+Physics+Research+Section+B%22">Nuclear Instruments & Methods in Physics Research Section B</searchLink>. Jun2009, Vol. 267 Issue 12/13, p2321-2326. 6p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Microfabrication%22">Microfabrication</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+etching%22">Semiconductor etching</searchLink><br /><searchLink fieldCode="DE" term="%22Microstructure%22">Microstructure</searchLink><br /><searchLink fieldCode="DE" term="%22Lithography%22">Lithography</searchLink><br /><searchLink fieldCode="DE" term="%22Proton+beams%22">Proton beams</searchLink><br /><searchLink fieldCode="DE" term="%22Gallium+arsenide%22">Gallium arsenide</searchLink><br /><searchLink fieldCode="DE" term="%22Helium+ions%22">Helium ions</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Abstract: While the creation of microstructures in Si and GaAs by irradiation with high energy protons and helium ions and subsequent electrochemical etching has already been reported, the creation of microstructures in InP using this technique is investigated here for the first time. It is demonstrated that proton irradiation of Fe-doped semi-insulating InP(001) leads to an amplified material removal in the irradiated areas during electrochemical etching in an HF solution. By this way microstructures were produced using a 2.25MeV proton beam focused down to ∼1μm. The depth of the etched structures depends on the etching procedure. In addition, amplified etching of non-irradiated material encircled by closed irradiated patterns was observed. Furthermore, irradiation with helium ions leads to the formation of thin freestanding InP layers by simultaneous underetching as well as etching from the sample surface of the irradiated regions. In contrast to the semi-insulating material, the irradiation and electrochemical etching of n-type InP results in an amplified formation of porous material which partly leads to a complete removal of the material in the irradiated areas. A comparison between GaAs and InP concerning the dissolution characteristics shows mainly a similar behavior of the semi-insulating types of these semiconductors and of the n-type materials. [Copyright &y& Elsevier] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Nuclear Instruments & Methods in Physics Research Section B is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1016/j.nimb.2009.03.023 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 6 StartPage: 2321 Subjects: – SubjectFull: Microfabrication Type: general – SubjectFull: Semiconductor etching Type: general – SubjectFull: Microstructure Type: general – SubjectFull: Lithography Type: general – SubjectFull: Proton beams Type: general – SubjectFull: Gallium arsenide Type: general – SubjectFull: Helium ions Type: general Titles: – TitleFull: Fabrication of microstructures in III–V semiconductors by proton beam writing Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Menzel, F. – PersonEntity: Name: NameFull: Spemann, D. – PersonEntity: Name: NameFull: Lenzner, J. – PersonEntity: Name: NameFull: Böhlmann, W. – PersonEntity: Name: NameFull: Zimmermann, G. – PersonEntity: Name: NameFull: Butz, T. IsPartOfRelationships: – BibEntity: Dates: – D: 15 M: 06 Text: Jun2009 Type: published Y: 2009 Identifiers: – Type: issn-print Value: 0168583X Numbering: – Type: volume Value: 267 – Type: issue Value: 12/13 Titles: – TitleFull: Nuclear Instruments & Methods in Physics Research Section B Type: main |
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