Cluster geometry and survival probability in systems driven by reaction—diffusion dynamics.

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Title: Cluster geometry and survival probability in systems driven by reaction—diffusion dynamics.
Authors: Windus, Alastair1,2, Jensen, Henrik J.1,2 h.jensen@imperial.ac.uk
Source: New Journal of Physics. Nov2008, Vol. 10 Issue 11, p1-10. 10p. 6 Graphs.
Subjects: Diffusion, Semiconductor diffusion, Separation (Technology), Semiconductor doping, Cluster analysis (Statistics), Properties of matter
Abstract: We consider a reaction-diffusion model incorporating the reactions A → ø A → 2A and 2A → 3A. Depending on the relative rates for sexual and asexual reproduction of the quantity A, the model exhibits either a continuous or first-order absorbing phase transition to an extinct state. A tricritical point separates the two phase lines. While we comment on this critical behaviour, the main focus of the paper is on the geometry of the population clusters that form. We observe the different cluster structures that arise at criticality for the three different types of critical behaviour and show that there exists a linear relationship for the survival probability against initial cluster size at the tricritical point only. [ABSTRACT FROM AUTHOR]
Copyright of New Journal of Physics is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
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  Data: Cluster geometry and survival probability in systems driven by reaction—diffusion dynamics.
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  Data: <searchLink fieldCode="AR" term="%22Windus%2C+Alastair%22">Windus, Alastair</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AR" term="%22Jensen%2C+Henrik+J%2E%22">Jensen, Henrik J.</searchLink><relatesTo>1,2</relatesTo><i> h.jensen@imperial.ac.uk</i>
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  Data: <searchLink fieldCode="JN" term="%22New+Journal+of+Physics%22">New Journal of Physics</searchLink>. Nov2008, Vol. 10 Issue 11, p1-10. 10p. 6 Graphs.
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  Data: <searchLink fieldCode="DE" term="%22Diffusion%22">Diffusion</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+diffusion%22">Semiconductor diffusion</searchLink><br /><searchLink fieldCode="DE" term="%22Separation+%28Technology%29%22">Separation (Technology)</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+doping%22">Semiconductor doping</searchLink><br /><searchLink fieldCode="DE" term="%22Cluster+analysis+%28Statistics%29%22">Cluster analysis (Statistics)</searchLink><br /><searchLink fieldCode="DE" term="%22Properties+of+matter%22">Properties of matter</searchLink>
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  Data: We consider a reaction-diffusion model incorporating the reactions A → ø A → 2A and 2A → 3A. Depending on the relative rates for sexual and asexual reproduction of the quantity A, the model exhibits either a continuous or first-order absorbing phase transition to an extinct state. A tricritical point separates the two phase lines. While we comment on this critical behaviour, the main focus of the paper is on the geometry of the population clusters that form. We observe the different cluster structures that arise at criticality for the three different types of critical behaviour and show that there exists a linear relationship for the survival probability against initial cluster size at the tricritical point only. [ABSTRACT FROM AUTHOR]
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  Data: <i>Copyright of New Journal of Physics is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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        Value: 10.1088/1367-2630/10/11/113023
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      – Code: eng
        Text: English
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        PageCount: 10
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      – SubjectFull: Diffusion
        Type: general
      – SubjectFull: Semiconductor diffusion
        Type: general
      – SubjectFull: Separation (Technology)
        Type: general
      – SubjectFull: Semiconductor doping
        Type: general
      – SubjectFull: Cluster analysis (Statistics)
        Type: general
      – SubjectFull: Properties of matter
        Type: general
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      – TitleFull: Cluster geometry and survival probability in systems driven by reaction—diffusion dynamics.
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              Text: Nov2008
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