APA (7th ed.) Citation

Li, J. Z., Hydrick, J. M., Park, J. S., Li, J., Bai, J., Cheng, Z. Y., . . . Shellenbarger, Z. (2009). Monolithic Integration of GaAs/InGaAs Lasers on Virtual Ge Substrates via Aspect-Ratio Trapping. Journal of The Electrochemical Society, 156(7), H574. https://doi.org/10.1149/1.3129463

Chicago Style (17th ed.) Citation

Li, J. Z., et al. "Monolithic Integration of GaAs/InGaAs Lasers on Virtual Ge Substrates via Aspect-Ratio Trapping." Journal of The Electrochemical Society 156, no. 7 (2009): H574. https://doi.org/10.1149/1.3129463.

MLA (9th ed.) Citation

Li, J. Z., et al. "Monolithic Integration of GaAs/InGaAs Lasers on Virtual Ge Substrates via Aspect-Ratio Trapping." Journal of The Electrochemical Society, vol. 156, no. 7, 2009, p. H574, https://doi.org/10.1149/1.3129463.