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Monolithic Integration of GaAs/InGaAs Lasers on Virtual Ge Substrates via Aspect-Ratio Trapping.

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Title: Monolithic Integration of GaAs/InGaAs Lasers on Virtual Ge Substrates via Aspect-Ratio Trapping.
Authors: Li, J. Z.1 jli@amberwave.com, Hydrick, J. M.1, Park, J. S.1, Li, J.1, Bai, J.1, Cheng, Z. Y.1, Carroll, M.1, Fiorenza, J. G.1, Lochtefeld, A.1, Chan, W.2, Shellenbarger, Z.2
Source: Journal of The Electrochemical Society. 2009, Vol. 156 Issue 7, pH574-H578. 5p.
Subjects: Metal organic chemical vapor deposition, Germanium compounds, Ion traps, Substrates (Materials science), Electrolytic polishing, Epitaxy, Wavelengths, Lasers
Abstract: GaAsIlnGaAs quantum-well lasers have been demonstrated by metallorganic chemical vapor deposition on virtual Ge substrates on Si via aspect-ratio trapping (ART) and epitaxial lateral overgrowth (ELO). Laser-structure growth is achieved in two steps: The first step is growing uncoalesced defect-free Ge stripes dn a SiO2 trench-pattemed silicon substrate via ART, whereby the misfit defects originating from the Ge/Si interface are trapped by laterally confining sidewalls. Defects arising from above the SiO2 film are reduced by using an optimized ELO process followed by chemical mechanical polishing to provide a planar Ge surface. The second step is overgrowing a GaAsIInGaAs laser structure on the virtual Ge substrate. A number of GaAs/Ge integration issues, including Ge autodoping and antiphase domain defects in GaAs, have been overcome. Despite unoptimized laser structures with high series resistance and large threshold current densities, pulsed room-temperature lasing at a wavelength of 980 nm has been demonstrated using a combination of ART and ELO. This technique is very promising for the achievement of reliable GaAs-based optoelectronic devices on Si. [ABSTRACT FROM AUTHOR]
Copyright of Journal of The Electrochemical Society is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Monolithic Integration of GaAs/InGaAs Lasers on Virtual Ge Substrates via Aspect-Ratio Trapping.
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  Data: <searchLink fieldCode="DE" term="%22Metal+organic+chemical+vapor+deposition%22">Metal organic chemical vapor deposition</searchLink><br /><searchLink fieldCode="DE" term="%22Germanium+compounds%22">Germanium compounds</searchLink><br /><searchLink fieldCode="DE" term="%22Ion+traps%22">Ion traps</searchLink><br /><searchLink fieldCode="DE" term="%22Substrates+%28Materials+science%29%22">Substrates (Materials science)</searchLink><br /><searchLink fieldCode="DE" term="%22Electrolytic+polishing%22">Electrolytic polishing</searchLink><br /><searchLink fieldCode="DE" term="%22Epitaxy%22">Epitaxy</searchLink><br /><searchLink fieldCode="DE" term="%22Wavelengths%22">Wavelengths</searchLink><br /><searchLink fieldCode="DE" term="%22Lasers%22">Lasers</searchLink>
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  Data: GaAsIlnGaAs quantum-well lasers have been demonstrated by metallorganic chemical vapor deposition on virtual Ge substrates on Si via aspect-ratio trapping (ART) and epitaxial lateral overgrowth (ELO). Laser-structure growth is achieved in two steps: The first step is growing uncoalesced defect-free Ge stripes dn a SiO2 trench-pattemed silicon substrate via ART, whereby the misfit defects originating from the Ge/Si interface are trapped by laterally confining sidewalls. Defects arising from above the SiO2 film are reduced by using an optimized ELO process followed by chemical mechanical polishing to provide a planar Ge surface. The second step is overgrowing a GaAsIInGaAs laser structure on the virtual Ge substrate. A number of GaAs/Ge integration issues, including Ge autodoping and antiphase domain defects in GaAs, have been overcome. Despite unoptimized laser structures with high series resistance and large threshold current densities, pulsed room-temperature lasing at a wavelength of 980 nm has been demonstrated using a combination of ART and ELO. This technique is very promising for the achievement of reliable GaAs-based optoelectronic devices on Si. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
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  Data: <i>Copyright of Journal of The Electrochemical Society is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1149/1.3129463
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      – Code: eng
        Text: English
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        PageCount: 5
        StartPage: H574
    Subjects:
      – SubjectFull: Metal organic chemical vapor deposition
        Type: general
      – SubjectFull: Germanium compounds
        Type: general
      – SubjectFull: Ion traps
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      – SubjectFull: Substrates (Materials science)
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      – SubjectFull: Electrolytic polishing
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      – SubjectFull: Wavelengths
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      – SubjectFull: Lasers
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      – TitleFull: Monolithic Integration of GaAs/InGaAs Lasers on Virtual Ge Substrates via Aspect-Ratio Trapping.
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