Jet ECD planting and seed layers for sub-0.10mum Cu interconnects.

Saved in:
Bibliographic Details
Title: Jet ECD planting and seed layers for sub-0.10mum Cu interconnects.
Authors: Cohen, Uri, Tzanavaras, George
Source: Solid State Technology. May2001, Vol. 44 Issue 5, p61. 5p. 1 Color Photograph, 1 Black and White Photograph, 5 Diagrams, 1 Graph.
Subjects: Electroplating, Electrochemical metallizing
Abstract: Presents an inhibition model which explains the mechanism and the beneficial effects of Jet electrochemical deposition plating. Problems with conventional physical vapor deposition and chemical vapor deposition seed layers; Details on the plating inhibition model; Information on conventional Cu seed layers.
Database: Engineering Source
Full text is not displayed to guests.
FullText Links:
  – Type: pdflink
Text:
  Availability: 1
Header DbId: egs
DbLabel: Engineering Source
An: 4425814
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Jet ECD planting and seed layers for sub-0.10mum Cu interconnects.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Cohen%2C+Uri%22">Cohen, Uri</searchLink><br /><searchLink fieldCode="AR" term="%22Tzanavaras%2C+George%22">Tzanavaras, George</searchLink>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Solid+State+Technology%22">Solid State Technology</searchLink>. May2001, Vol. 44 Issue 5, p61. 5p. 1 Color Photograph, 1 Black and White Photograph, 5 Diagrams, 1 Graph.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Electroplating%22">Electroplating</searchLink><br /><searchLink fieldCode="DE" term="%22Electrochemical+metallizing%22">Electrochemical metallizing</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Presents an inhibition model which explains the mechanism and the beneficial effects of Jet electrochemical deposition plating. Problems with conventional physical vapor deposition and chemical vapor deposition seed layers; Details on the plating inhibition model; Information on conventional Cu seed layers.
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=4425814
RecordInfo BibRecord:
  BibEntity:
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 5
        StartPage: 61
    Subjects:
      – SubjectFull: Electroplating
        Type: general
      – SubjectFull: Electrochemical metallizing
        Type: general
    Titles:
      – TitleFull: Jet ECD planting and seed layers for sub-0.10mum Cu interconnects.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Cohen, Uri
      – PersonEntity:
          Name:
            NameFull: Tzanavaras, George
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 05
              Text: May2001
              Type: published
              Y: 2001
          Identifiers:
            – Type: issn-print
              Value: 0038111X
          Numbering:
            – Type: volume
              Value: 44
            – Type: issue
              Value: 5
          Titles:
            – TitleFull: Solid State Technology
              Type: main
ResultId 1