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Spin drift–diffusion transport and its applications in semiconductors

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Title: Spin drift–diffusion transport and its applications in semiconductors
Authors: Miah, M. Idrish1,2 m.miah@griffith.edu.au, Gray, E. MacA.1
Source: Current Opinion in Solid State & Materials Science. Oct2009, Vol. 13 Issue 5/6, p99-104. 6p.
Subjects: Electron distribution, Semiconductor diffusion, Electron transport, Electric fields, Spintronics, Charge exchange
Abstract: Abstract: We study theoretically the propagation and distribution of electron spin density in semiconductors within the drift–diffusion model in an external electric field. From the solution of the spin drift–diffusion equation, we derive the expressions for spin currents in the down-stream (DS) and up-stream (US) directions. We find that drift and diffusion currents contribute to the spin current and there is an electric field, called the drift–diffusion crossover field, where the drift and diffusion mechanisms contribute equally to the spin current in the DS direction, and that the spin current in the US direction vanishes when the electric field is very large. We calculate the drift–diffusion crossover field and show that the intrinsic spin diffusion length in a semiconductor can be determined directly from it if the temperature, electron density and both the temperature and electron density, respectively, are known for nondegenerate, highly degenerate and degenerate systems. The results will be useful in obtaining transport properties of the electron’s spin in semiconductors, the essential information for spintronic technology. [Copyright &y& Elsevier]
Copyright of Current Opinion in Solid State & Materials Science is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 44582948
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Spin drift–diffusion transport and its applications in semiconductors
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Miah%2C+M%2E+Idrish%22">Miah, M. Idrish</searchLink><relatesTo>1,2</relatesTo><i> m.miah@griffith.edu.au</i><br /><searchLink fieldCode="AR" term="%22Gray%2C+E%2E+MacA%2E%22">Gray, E. MacA.</searchLink><relatesTo>1</relatesTo>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Current+Opinion+in+Solid+State+%26+Materials+Science%22">Current Opinion in Solid State & Materials Science</searchLink>. Oct2009, Vol. 13 Issue 5/6, p99-104. 6p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Electron+distribution%22">Electron distribution</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+diffusion%22">Semiconductor diffusion</searchLink><br /><searchLink fieldCode="DE" term="%22Electron+transport%22">Electron transport</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+fields%22">Electric fields</searchLink><br /><searchLink fieldCode="DE" term="%22Spintronics%22">Spintronics</searchLink><br /><searchLink fieldCode="DE" term="%22Charge+exchange%22">Charge exchange</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Abstract: We study theoretically the propagation and distribution of electron spin density in semiconductors within the drift–diffusion model in an external electric field. From the solution of the spin drift–diffusion equation, we derive the expressions for spin currents in the down-stream (DS) and up-stream (US) directions. We find that drift and diffusion currents contribute to the spin current and there is an electric field, called the drift–diffusion crossover field, where the drift and diffusion mechanisms contribute equally to the spin current in the DS direction, and that the spin current in the US direction vanishes when the electric field is very large. We calculate the drift–diffusion crossover field and show that the intrinsic spin diffusion length in a semiconductor can be determined directly from it if the temperature, electron density and both the temperature and electron density, respectively, are known for nondegenerate, highly degenerate and degenerate systems. The results will be useful in obtaining transport properties of the electron’s spin in semiconductors, the essential information for spintronic technology. [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Current Opinion in Solid State & Materials Science is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1016/j.cossms.2009.02.002
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 6
        StartPage: 99
    Subjects:
      – SubjectFull: Electron distribution
        Type: general
      – SubjectFull: Semiconductor diffusion
        Type: general
      – SubjectFull: Electron transport
        Type: general
      – SubjectFull: Electric fields
        Type: general
      – SubjectFull: Spintronics
        Type: general
      – SubjectFull: Charge exchange
        Type: general
    Titles:
      – TitleFull: Spin drift–diffusion transport and its applications in semiconductors
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Miah, M. Idrish
      – PersonEntity:
          Name:
            NameFull: Gray, E. MacA.
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 10
              Text: Oct2009
              Type: published
              Y: 2009
          Identifiers:
            – Type: issn-print
              Value: 13590286
          Numbering:
            – Type: volume
              Value: 13
            – Type: issue
              Value: 5/6
          Titles:
            – TitleFull: Current Opinion in Solid State & Materials Science
              Type: main
ResultId 1