Bibliographic Details
| Title: |
XPS and IPE analysis of HfO2 band alignment with high-mobility semiconductors |
| Authors: |
Perego, M.1 michele.perego@mdm.infm.it, Seguini, G.1, Fanciulli, M.1,2 |
| Source: |
Materials Science in Semiconductor Processing. Oct2008, Vol. 11 Issue 5/6, p221-225. 5p. |
| Subjects: |
X-ray photoelectron spectroscopy, Epitaxy, Photoemission, Photoconductivity, Hafnium oxide, Gallium arsenide, Germanium |
| Abstract: |
Abstract: A detailed analysis of the band alignment between atomic-layer deposition (ALD)-grown HfO2 thin films and n-type Ge(100) substrate is presented. The valence band offset (VBO) is determined by X-ray photoelectron spectroscopy (XPS) after careful evaluation of the experimental data and accurate removal of the artefacts induced by differential charging phenomena occurring during XPS measurement. VBO values are 2.7±0.1eV for all samples independent of the different growth conditions. A conduction band offset (CBO) of 2.0±0.1eV and a band gap of 5.6±0.1eV have been obtained by internal photoemission (IPE) and photoconductivity measurements, respectively. VBO and CBO values obtained by the different techniques are in excellent agreement within the experimental error. [Copyright &y& Elsevier] |
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Copyright of Materials Science in Semiconductor Processing is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) |
| Database: |
Engineering Source |
