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XPS and IPE analysis of HfO2 band alignment with high-mobility semiconductors

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Title: XPS and IPE analysis of HfO2 band alignment with high-mobility semiconductors
Authors: Perego, M.1 michele.perego@mdm.infm.it, Seguini, G.1, Fanciulli, M.1,2
Source: Materials Science in Semiconductor Processing. Oct2008, Vol. 11 Issue 5/6, p221-225. 5p.
Subjects: X-ray photoelectron spectroscopy, Epitaxy, Photoemission, Photoconductivity, Hafnium oxide, Gallium arsenide, Germanium
Abstract: Abstract: A detailed analysis of the band alignment between atomic-layer deposition (ALD)-grown HfO2 thin films and n-type Ge(100) substrate is presented. The valence band offset (VBO) is determined by X-ray photoelectron spectroscopy (XPS) after careful evaluation of the experimental data and accurate removal of the artefacts induced by differential charging phenomena occurring during XPS measurement. VBO values are 2.7±0.1eV for all samples independent of the different growth conditions. A conduction band offset (CBO) of 2.0±0.1eV and a band gap of 5.6±0.1eV have been obtained by internal photoemission (IPE) and photoconductivity measurements, respectively. VBO and CBO values obtained by the different techniques are in excellent agreement within the experimental error. [Copyright &y& Elsevier]
Copyright of Materials Science in Semiconductor Processing is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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DbLabel: Engineering Source
An: 44783798
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  Data: XPS and IPE analysis of HfO<subscript>2</subscript> band alignment with high-mobility semiconductors
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  Data: <searchLink fieldCode="AR" term="%22Perego%2C+M%2E%22">Perego, M.</searchLink><relatesTo>1</relatesTo><i> michele.perego@mdm.infm.it</i><br /><searchLink fieldCode="AR" term="%22Seguini%2C+G%2E%22">Seguini, G.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Fanciulli%2C+M%2E%22">Fanciulli, M.</searchLink><relatesTo>1,2</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Materials+Science+in+Semiconductor+Processing%22">Materials Science in Semiconductor Processing</searchLink>. Oct2008, Vol. 11 Issue 5/6, p221-225. 5p.
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  Data: <searchLink fieldCode="DE" term="%22X-ray+photoelectron+spectroscopy%22">X-ray photoelectron spectroscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Epitaxy%22">Epitaxy</searchLink><br /><searchLink fieldCode="DE" term="%22Photoemission%22">Photoemission</searchLink><br /><searchLink fieldCode="DE" term="%22Photoconductivity%22">Photoconductivity</searchLink><br /><searchLink fieldCode="DE" term="%22Hafnium+oxide%22">Hafnium oxide</searchLink><br /><searchLink fieldCode="DE" term="%22Gallium+arsenide%22">Gallium arsenide</searchLink><br /><searchLink fieldCode="DE" term="%22Germanium%22">Germanium</searchLink>
– Name: Abstract
  Label: Abstract
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  Data: Abstract: A detailed analysis of the band alignment between atomic-layer deposition (ALD)-grown HfO2 thin films and n-type Ge(100) substrate is presented. The valence band offset (VBO) is determined by X-ray photoelectron spectroscopy (XPS) after careful evaluation of the experimental data and accurate removal of the artefacts induced by differential charging phenomena occurring during XPS measurement. VBO values are 2.7±0.1eV for all samples independent of the different growth conditions. A conduction band offset (CBO) of 2.0±0.1eV and a band gap of 5.6±0.1eV have been obtained by internal photoemission (IPE) and photoconductivity measurements, respectively. VBO and CBO values obtained by the different techniques are in excellent agreement within the experimental error. [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Materials Science in Semiconductor Processing is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1016/j.mssp.2008.10.008
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      – Code: eng
        Text: English
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        PageCount: 5
        StartPage: 221
    Subjects:
      – SubjectFull: X-ray photoelectron spectroscopy
        Type: general
      – SubjectFull: Epitaxy
        Type: general
      – SubjectFull: Photoemission
        Type: general
      – SubjectFull: Photoconductivity
        Type: general
      – SubjectFull: Hafnium oxide
        Type: general
      – SubjectFull: Gallium arsenide
        Type: general
      – SubjectFull: Germanium
        Type: general
    Titles:
      – TitleFull: XPS and IPE analysis of HfO2 band alignment with high-mobility semiconductors
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            NameFull: Seguini, G.
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            NameFull: Fanciulli, M.
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              M: 10
              Text: Oct2008
              Type: published
              Y: 2008
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              Value: 5/6
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            – TitleFull: Materials Science in Semiconductor Processing
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