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Non-metallic effects in silicided gate MOSFETs

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Title: Non-metallic effects in silicided gate MOSFETs
Authors: Rodriguez, Noel1 noel@ugr.es, Gamiz, Francisco1, Clerc, Raphael2, Sampedro, Carlos1, Godoy, Andres1, Ghibaudo, Gerard2
Source: Solid-State Electronics. Dec2009, Vol. 53 Issue 12, p1313-1317. 5p.
Subjects: Metal oxide semiconductor field-effect transistors, Gate array circuits, Semiconductor industry, Performance evaluation, Simulation methods & models, Electric contacts, Electric measurements, Solid phase extraction
Abstract: Abstract: Introducing metal or fully silicided gates in the semiconductor industry leads to improvements in MOSFET performance when compared to their polysilicon counterparts. However we will show, through Poisson–Schroedinger simulations, that when silicides are not treated as ideal metal contacts, the non-metallic effects such as accumulation and depletion regions in the gate, although partially suppressed, are still present, even if the actual electron density of a metal is taken into account. The role of the dark space hidden beneath highly doped gates is discussed, highlighting overestimation of C–V measurements in the extraction of the oxide thickness. In terms of insulator thickness, a 0.2nm correction is suggested for silicided gates, due to quantum corrections in the gate contact. An error of up to 15% in the evaluation of gate to channel capacitance was found, due to the quantization of the holes in accumulation. Finally, the impact of a substoichiometric insulator layer and the band-gap narrowing of highly-doped polysilicon gates is also discussed. [Copyright &y& Elsevier]
Copyright of Solid-State Electronics is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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Header DbId: egs
DbLabel: Engineering Source
An: 45418806
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Non-metallic effects in silicided gate MOSFETs
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  Data: <searchLink fieldCode="AR" term="%22Rodriguez%2C+Noel%22">Rodriguez, Noel</searchLink><relatesTo>1</relatesTo><i> noel@ugr.es</i><br /><searchLink fieldCode="AR" term="%22Gamiz%2C+Francisco%22">Gamiz, Francisco</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Clerc%2C+Raphael%22">Clerc, Raphael</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Sampedro%2C+Carlos%22">Sampedro, Carlos</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Godoy%2C+Andres%22">Godoy, Andres</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Ghibaudo%2C+Gerard%22">Ghibaudo, Gerard</searchLink><relatesTo>2</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Solid-State+Electronics%22">Solid-State Electronics</searchLink>. Dec2009, Vol. 53 Issue 12, p1313-1317. 5p.
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  Data: <searchLink fieldCode="DE" term="%22Metal+oxide+semiconductor+field-effect+transistors%22">Metal oxide semiconductor field-effect transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Gate+array+circuits%22">Gate array circuits</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+industry%22">Semiconductor industry</searchLink><br /><searchLink fieldCode="DE" term="%22Performance+evaluation%22">Performance evaluation</searchLink><br /><searchLink fieldCode="DE" term="%22Simulation+methods+%26+models%22">Simulation methods & models</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+contacts%22">Electric contacts</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+measurements%22">Electric measurements</searchLink><br /><searchLink fieldCode="DE" term="%22Solid+phase+extraction%22">Solid phase extraction</searchLink>
– Name: Abstract
  Label: Abstract
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  Data: Abstract: Introducing metal or fully silicided gates in the semiconductor industry leads to improvements in MOSFET performance when compared to their polysilicon counterparts. However we will show, through Poisson–Schroedinger simulations, that when silicides are not treated as ideal metal contacts, the non-metallic effects such as accumulation and depletion regions in the gate, although partially suppressed, are still present, even if the actual electron density of a metal is taken into account. The role of the dark space hidden beneath highly doped gates is discussed, highlighting overestimation of C–V measurements in the extraction of the oxide thickness. In terms of insulator thickness, a 0.2nm correction is suggested for silicided gates, due to quantum corrections in the gate contact. An error of up to 15% in the evaluation of gate to channel capacitance was found, due to the quantization of the holes in accumulation. Finally, the impact of a substoichiometric insulator layer and the band-gap narrowing of highly-doped polysilicon gates is also discussed. [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Solid-State Electronics is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1016/j.sse.2009.09.016
    Languages:
      – Code: eng
        Text: English
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      Pagination:
        PageCount: 5
        StartPage: 1313
    Subjects:
      – SubjectFull: Metal oxide semiconductor field-effect transistors
        Type: general
      – SubjectFull: Gate array circuits
        Type: general
      – SubjectFull: Semiconductor industry
        Type: general
      – SubjectFull: Performance evaluation
        Type: general
      – SubjectFull: Simulation methods & models
        Type: general
      – SubjectFull: Electric contacts
        Type: general
      – SubjectFull: Electric measurements
        Type: general
      – SubjectFull: Solid phase extraction
        Type: general
    Titles:
      – TitleFull: Non-metallic effects in silicided gate MOSFETs
        Type: main
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          Name:
            NameFull: Rodriguez, Noel
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            NameFull: Gamiz, Francisco
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            NameFull: Clerc, Raphael
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            NameFull: Sampedro, Carlos
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            NameFull: Godoy, Andres
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            NameFull: Ghibaudo, Gerard
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            – D: 01
              M: 12
              Text: Dec2009
              Type: published
              Y: 2009
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              Value: 53
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              Value: 12
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            – TitleFull: Solid-State Electronics
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