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Gallium arsenide probes for scanning near-field probe microscopy.

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Title: Gallium arsenide probes for scanning near-field probe microscopy.
Authors: Heisig, S., Oesterschulze, E.
Source: Applied Physics A: Materials Science & Processing. 1998, Vol. 66 Issue 7, pS385. 1p.
Subjects: Gallium arsenide, Scanning probe microscopy, Semiconductors, Near-field microscopy
Abstract: Abstract. Gallium arsenide is introduced as a material for the fabrication of novel probes for scanning probe microscopy (SPM). Compared to conventional probe materials (silicon, silicon nitride), III/V semiconductors such as gallium arsenide offer exceptional material properties: a direct band gap appropriate for the fabrication of optical sensors, high electron mobility necessary for high-frequency devices, and high electrical resistance exploited to reduce electrical losses in microwave guide applications. We report on novel developments in the field of gallium arsenide cantilevers with integrated tips for SPM applications. As a result of an intensive study of the gallium arsenide etching behavior we are able to adapt the tip shape to the requirements in SPM, for example, high aspect ratio, minimized radius of curvature, and low surface roughness. These cantilevers represent the basic sensor design for both passive as well as active scanning near-field probes. As a first approach, for an active SPM probe a Schottky diode integrated in the tip apex was produced. First results on the thermal and optical characterization of Schottky diode probes are presented. High-frequency measurements of a coplanar microwave guide made of semi-insulating GaAs in comparison to silicon were carried out. Additionally, concepts for a light-emitting diode and a laser diode integrated in a tip -- a challenge for future concepts in SNOM -- are discussed. [ABSTRACT FROM AUTHOR]
Copyright of Applied Physics A: Materials Science & Processing is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Availability: 0
Header DbId: egs
DbLabel: Engineering Source
An: 4733578
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Gallium arsenide probes for scanning near-field probe microscopy.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Heisig%2C+S%2E%22">Heisig, S.</searchLink><br /><searchLink fieldCode="AR" term="%22Oesterschulze%2C+E%2E%22">Oesterschulze, E.</searchLink>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+A%3A+Materials+Science+%26+Processing%22">Applied Physics A: Materials Science & Processing</searchLink>. 1998, Vol. 66 Issue 7, pS385. 1p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Gallium+arsenide%22">Gallium arsenide</searchLink><br /><searchLink fieldCode="DE" term="%22Scanning+probe+microscopy%22">Scanning probe microscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductors%22">Semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Near-field+microscopy%22">Near-field microscopy</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Abstract. Gallium arsenide is introduced as a material for the fabrication of novel probes for scanning probe microscopy (SPM). Compared to conventional probe materials (silicon, silicon nitride), III/V semiconductors such as gallium arsenide offer exceptional material properties: a direct band gap appropriate for the fabrication of optical sensors, high electron mobility necessary for high-frequency devices, and high electrical resistance exploited to reduce electrical losses in microwave guide applications. We report on novel developments in the field of gallium arsenide cantilevers with integrated tips for SPM applications. As a result of an intensive study of the gallium arsenide etching behavior we are able to adapt the tip shape to the requirements in SPM, for example, high aspect ratio, minimized radius of curvature, and low surface roughness. These cantilevers represent the basic sensor design for both passive as well as active scanning near-field probes. As a first approach, for an active SPM probe a Schottky diode integrated in the tip apex was produced. First results on the thermal and optical characterization of Schottky diode probes are presented. High-frequency measurements of a coplanar microwave guide made of semi-insulating GaAs in comparison to silicon were carried out. Additionally, concepts for a light-emitting diode and a laser diode integrated in a tip -- a challenge for future concepts in SNOM -- are discussed. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Applied Physics A: Materials Science & Processing is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1007/s003390051169
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 1
        StartPage: S385
    Subjects:
      – SubjectFull: Gallium arsenide
        Type: general
      – SubjectFull: Scanning probe microscopy
        Type: general
      – SubjectFull: Semiconductors
        Type: general
      – SubjectFull: Near-field microscopy
        Type: general
    Titles:
      – TitleFull: Gallium arsenide probes for scanning near-field probe microscopy.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Heisig, S.
      – PersonEntity:
          Name:
            NameFull: Oesterschulze, E.
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 02
              M: 06
              Text: 1998
              Type: published
              Y: 1998
          Identifiers:
            – Type: issn-print
              Value: 09478396
          Numbering:
            – Type: volume
              Value: 66
            – Type: issue
              Value: 7
          Titles:
            – TitleFull: Applied Physics A: Materials Science & Processing
              Type: main
ResultId 1