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Dry fabrication process for heterojunction solar cells through in-situ plasma cleaning and passivation

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Title: Dry fabrication process for heterojunction solar cells through in-situ plasma cleaning and passivation
Authors: Moreno, M.1 mario.moreno@polytechnique.edu, Labrune, M.1,2, Roca i Cabarrocas, P.1
Source: Solar Energy Materials & Solar Cells. Mar2010, Vol. 94 Issue 3, p402-405. 4p.
Subjects: Microfabrication, Heterojunctions, Ellipsometry, Solar cells, Cleaning, Surfaces (Technology), Low temperatures, Semiconductor wafers, Plasma-enhanced chemical vapor deposition
Abstract: Abstract: We have studied low temperature plasma processes (T sub≤200°C) for the efficient cleaning and passivation of c-Si wafers, aiming for fully dry fabrication of heterojunction solar cells. We have experimented with H2–SiF4 plasmas in a standard RF PECVD reactor in order to etch the native oxide from the c-Si wafer and a thin a-Si:H layer was deposited from SiH4 to passivate the c-Si surface. In-situ ellipsometry was used to optimize the process conditions for an efficient surface cleaning. Various plasma treatments were performed before a-Si:H deposition in order to reduce the surface recombination. Optimized process conditions resulted in high effective lifetime values (τ eff≈1.55ms), low effective surface recombination velocities (S eff≤9cms−1) and high implicit open circuit voltages (V oc≈0.713V). [Copyright &y& Elsevier]
Copyright of Solar Energy Materials & Solar Cells is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 47825220
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Label: Title
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  Data: Dry fabrication process for heterojunction solar cells through in-situ plasma cleaning and passivation
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  Data: <searchLink fieldCode="AR" term="%22Moreno%2C+M%2E%22">Moreno, M.</searchLink><relatesTo>1</relatesTo><i> mario.moreno@polytechnique.edu</i><br /><searchLink fieldCode="AR" term="%22Labrune%2C+M%2E%22">Labrune, M.</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AR" term="%22Roca+i+Cabarrocas%2C+P%2E%22">Roca i Cabarrocas, P.</searchLink><relatesTo>1</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Solar+Energy+Materials+%26+Solar+Cells%22">Solar Energy Materials & Solar Cells</searchLink>. Mar2010, Vol. 94 Issue 3, p402-405. 4p.
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  Data: <searchLink fieldCode="DE" term="%22Microfabrication%22">Microfabrication</searchLink><br /><searchLink fieldCode="DE" term="%22Heterojunctions%22">Heterojunctions</searchLink><br /><searchLink fieldCode="DE" term="%22Ellipsometry%22">Ellipsometry</searchLink><br /><searchLink fieldCode="DE" term="%22Solar+cells%22">Solar cells</searchLink><br /><searchLink fieldCode="DE" term="%22Cleaning%22">Cleaning</searchLink><br /><searchLink fieldCode="DE" term="%22Surfaces+%28Technology%29%22">Surfaces (Technology)</searchLink><br /><searchLink fieldCode="DE" term="%22Low+temperatures%22">Low temperatures</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+wafers%22">Semiconductor wafers</searchLink><br /><searchLink fieldCode="DE" term="%22Plasma-enhanced+chemical+vapor+deposition%22">Plasma-enhanced chemical vapor deposition</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Abstract: We have studied low temperature plasma processes (T sub≤200°C) for the efficient cleaning and passivation of c-Si wafers, aiming for fully dry fabrication of heterojunction solar cells. We have experimented with H2–SiF4 plasmas in a standard RF PECVD reactor in order to etch the native oxide from the c-Si wafer and a thin a-Si:H layer was deposited from SiH4 to passivate the c-Si surface. In-situ ellipsometry was used to optimize the process conditions for an efficient surface cleaning. Various plasma treatments were performed before a-Si:H deposition in order to reduce the surface recombination. Optimized process conditions resulted in high effective lifetime values (τ eff≈1.55ms), low effective surface recombination velocities (S eff≤9cms−1) and high implicit open circuit voltages (V oc≈0.713V). [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Solar Energy Materials & Solar Cells is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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        Value: 10.1016/j.solmat.2009.10.016
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      – Code: eng
        Text: English
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        PageCount: 4
        StartPage: 402
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      – SubjectFull: Microfabrication
        Type: general
      – SubjectFull: Heterojunctions
        Type: general
      – SubjectFull: Ellipsometry
        Type: general
      – SubjectFull: Solar cells
        Type: general
      – SubjectFull: Cleaning
        Type: general
      – SubjectFull: Surfaces (Technology)
        Type: general
      – SubjectFull: Low temperatures
        Type: general
      – SubjectFull: Semiconductor wafers
        Type: general
      – SubjectFull: Plasma-enhanced chemical vapor deposition
        Type: general
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      – TitleFull: Dry fabrication process for heterojunction solar cells through in-situ plasma cleaning and passivation
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            NameFull: Moreno, M.
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            NameFull: Labrune, M.
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            NameFull: Roca i Cabarrocas, P.
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              Text: Mar2010
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              Y: 2010
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